Stacking driven Raman spectra change of carbon based 2D semiconductor C3N

Yucheng Yang; Wenya Wei; Peng He; Siwei Yang; Qinghong Yuan; Guqiao Ding; Zhi Liu; Xiaoming Xie

doi:10.1016/j.cclet.2021.09.098

Stacking driven Raman spectra change of carbon based 2D semiconductor C₃N

Yucheng Yang
, Wenya Wei
, Peng He
, Siwei Yang^*
, Qinghong Yuan
, Guqiao Ding
, Zhi Liu
, Xiaoming Xie

^*此作品的通讯作者

ShanghaiTech University
CAS - Shanghai Institute of Microsystem and Information Technology
University of Chinese Academy of Sciences
East China Normal University

科研成果: 期刊稿件 › 文章 › 同行评审

6 引用（Scopus）

摘要

As a two-dimensional carbon based semiconductor, C₃N acts as a promising material in many application areas. However, the basic physical properties such as Raman spectrum properties of C₃N is still not clear. In this paper, we clarify the Raman spectrum properties of multilayer C₃N. Moreover, the stacking driven Raman spectra change of multilayer C₃N is also discussed.

源语言	英语
页（从-至）	2600-2604
页数	5
期刊	Chinese Chemical Letters
卷	33
期	5
DOI	https://doi.org/10.1016/j.cclet.2021.09.098
出版状态	已出版 - 5月 2022
已对外发布	是

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10.1016/j.cclet.2021.09.098

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title = "Stacking driven Raman spectra change of carbon based 2D semiconductor C3N",

abstract = "As a two-dimensional carbon based semiconductor, C3N acts as a promising material in many application areas. However, the basic physical properties such as Raman spectrum properties of C3N is still not clear. In this paper, we clarify the Raman spectrum properties of multilayer C3N. Moreover, the stacking driven Raman spectra change of multilayer C3N is also discussed.",

keywords = "2D materials, CN, Carbon based semiconductor, Raman spectrum, Stacking structure",

author = "Yucheng Yang and Wenya Wei and Peng He and Siwei Yang and Qinghong Yuan and Guqiao Ding and Zhi Liu and Xiaoming Xie",

note = "Publisher Copyright: {\textcopyright} 2021",

year = "2022",

month = may,

doi = "10.1016/j.cclet.2021.09.098",

language = "英语",

volume = "33",

pages = "2600--2604",

journal = "Chinese Chemical Letters",

issn = "1001-8417",

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TY - JOUR

T1 - Stacking driven Raman spectra change of carbon based 2D semiconductor C3N

AU - Yang, Yucheng

AU - Wei, Wenya

AU - He, Peng

AU - Yang, Siwei

AU - Yuan, Qinghong

AU - Ding, Guqiao

AU - Liu, Zhi

AU - Xie, Xiaoming

PY - 2022/5

Y1 - 2022/5

N2 - As a two-dimensional carbon based semiconductor, C3N acts as a promising material in many application areas. However, the basic physical properties such as Raman spectrum properties of C3N is still not clear. In this paper, we clarify the Raman spectrum properties of multilayer C3N. Moreover, the stacking driven Raman spectra change of multilayer C3N is also discussed.

AB - As a two-dimensional carbon based semiconductor, C3N acts as a promising material in many application areas. However, the basic physical properties such as Raman spectrum properties of C3N is still not clear. In this paper, we clarify the Raman spectrum properties of multilayer C3N. Moreover, the stacking driven Raman spectra change of multilayer C3N is also discussed.

KW - 2D materials

KW - CN

KW - Carbon based semiconductor

KW - Raman spectrum

KW - Stacking structure

UR - https://www.scopus.com/pages/publications/85121929176

U2 - 10.1016/j.cclet.2021.09.098

DO - 10.1016/j.cclet.2021.09.098

M3 - 文章

AN - SCOPUS:85121929176

SN - 1001-8417

VL - 33

SP - 2600

EP - 2604

JO - Chinese Chemical Letters

JF - Chinese Chemical Letters

IS - 5

ER -

Stacking driven Raman spectra change of carbon based 2D semiconductor C3N

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Stacking driven Raman spectra change of carbon based 2D semiconductor C₃N