@inproceedings{22ea13afcd9b4cc7b9eb7dbc863c1fb2,
title = "Single crystalline InAsxSb1-x grown on (100) InSb substrate by liquid phase epitaxy",
abstract = "Single crystalline InAs0.016Sb0.984 film has been successfully grown on (100) InSb substrate by LPE method. A large supercooling (ΔT = 15 °C) had been used to prevent substrate from dissolving into the epilayer. High resolution X-ray diffraction (HRXRD) measurement was used to characterize the crystal quality of the film. Only (200) and (400) peaks were observed from the XRD spectrum, indicating that the film was single crystalline with (100) orientation. The Fourier transform infrared (FTIR) transmission spectrum of the film at room temperature revealed 7.77 μm cut-off wavelength of the film. The lattice dynamics of the epilayer was studied by Raman scattering, suggests two-mode behavior of the optical phonons.",
keywords = "InAsSb, Liquid phase epitaxy, Single crystal",
author = "Changhong Sun and Shuhong Hu and Qiwei Wang and Feng Qiu and Yingfei Lv and Huiyong Deng and Yan Sun and Ning Dai",
year = "2012",
doi = "10.1117/12.975813",
language = "英语",
isbn = "9780819491015",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "6th International Symposium on Advanced Optical Manufacturing and Testing Technologies",
note = "6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy ; Conference date: 26-04-2012 Through 29-04-2012",
}