Single crystalline InAs _xSb _{1 - X} films with cut-off wavelength of 7-8 μm grown on (1 0 0) InSb substrates by liquid phase epitaxy

InAs _xSb _{1 -x} single crystalline films with x from 0.02 to 0.05 have been successfully grown on (1 0 0) InSb substrates by liquid phase epitaxy without a buffer layer. High-resolution X-ray diffraction (HRXRD) was used to characterize the crystal quality of the films. The full-width at half-maximum (FWHM) of the (4 0 0) rocking curve (RC) line ranged from 157.96 to 417.02 arcsec, revealing that the films are good single crystals with (1 0 0) surface orientation. Composition of the films was analyzed by energy dispersive X-ray analysis (EDXA) and HRXRD using Vegard's law. The surface microstructures and morphologies of the films were characterized by scanning electronic microscopy (SEM) and optical microscopy. Optical properties were characterized by Fourier transform infrared (FTIR) transmission spectrum. A cut-off wavelength of 8.06 μm at x = 0.05, indicates the potential applications of the material for long-wavelength infrared detectors.