@inproceedings{20143db2569e4ac69a61afa142c99e72,
title = "SiC Trench MOSFET with N-base Super Barrier Rectifier Embedded for Optimizing Reverse Characteristic",
abstract = "A novel double trench SiC MOSFET embedded with N-base super barrier rectifier (NSBR-DTMOS) is proposed in this paper. The NSBR-DTMOS exhibits its diode turn on voltage (VF) half lower than that of body diode. With the super barrier rectifier (SBR) embedded as the freewheeling diode, the bipolar degradation phenomena caused by the body diode is eliminated successfully. Compared with the conventional DTMOS, the gate-to-drain capacitance (CGD) and gate-drain charge (QGD) are reduced by half, at the cost of the specific ON-resistance (Ron) increases by 9\% only. As a result, the figures of merit Ron×QG and Ron×QGD are improved by 45\% and 54\% respectively.",
keywords = "SiC MOSFET, bipolar degradation, figure of merit, super barrier rectifier",
author = "Zhengxun Deng and Xiaojin Li and Yabin Sun and Yanling Shi",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2021 ; Conference date: 24-11-2021 Through 26-11-2021",
year = "2021",
doi = "10.1109/ICTA53157.2021.9661969",
language = "英语",
series = "2021 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "101--102",
booktitle = "2021 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2021",
address = "美国",
}