Short-wavelength infrared defect emission as a probe of degradation processes in 980 nm single-mode diode lasers

Infrared emission from 980-nm single-mode high power diode lasers is recorded and analyzed in the wavelength range from 0.8 to 8.0 μm. A pronounced short-wavelength infrared (SWIR) emission band with a maximum at 1.3 μm originates from defect states located in the waveguide of the devices. The SWIR intensity is a measure of the non-equilibrium carrier concentration in the waveguide, allowing for a non-destructive waveguide mapping in spatially resolved detection schemes. The potential of this approach is demonstrated by measuring spatially resolved profiles of SWIR emission and correlating them with mid-wavelength infrared (MWIR) thermal emission along the cavity of devices undergoing repeated catastrophic optical damage. The enhancement of SWIR emission in the damaged parts of the cavity is due to a locally enhanced carrier density in the waveguide and allows for an analysis of the spatial damage patterns. The figure shows a side view of a diode laser during catastrophic degradation as recorded by a thermocamera within 5 successive current pulses. The geometry of the device is given in grayscale. The position of the laser chip is indicated by the dotted line. The thermal signatures of the internal degradation of the diode laser are overlaid in color. The bi-directional spread of the damage along the laser cavity is clearly visible. Emission from 980-nm single-mode high power diode lasers is analyzed in the wavelength range from 0.8 to 8.0 μm. Short-wavelength infrared (SWIR) emission with a maximum at 1.3 μm originates from defect states located in the waveguide of the devices. Thus, the SWIR intensity is a measure of the non-equilibrium carrier concentration there, allowing for a non-destructive mapping of this parameter. The potential of this approach is demonstrated by comparing the SWIR data with thermal measurements.