摘要
Separated AlxIn1-xN quantum dots (QDs) embedded in amorphous AlN films have been produced by radio-frequency co-sputtering technique on silicon (1 1 1) and quartz glass substrates. The mean size and density of AlxIn1-xN QDs can be conveniently monitored by deposition parameters. Transparent electron microscope, and X-ray diffraction were used to detect the structure of the AlxIn1-xN QDs system; field-emission scanning-electron microscope was adopted to measure the surface morphology and anticipate the size of the QDs; X-ray photoelectronic spectroscopy was used to measure the stoichiometric ratios of the QDs.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 200-203 |
| 页数 | 4 |
| 期刊 | Physica E: Low-Dimensional Systems and Nanostructures |
| 卷 | 31 |
| 期 | 2 |
| DOI | |
| 出版状态 | 已出版 - 3月 2006 |
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