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Separated AlxIn1-xN quantum dots grown by plasma-reactive co-sputtering

  • S. Y. Huang*
  • , S. Y. Xu
  • , J. D. Long
  • , Z. Sun
  • , X. Z. Wang
  • , Y. W. Chen
  • , T. Chen
  • , C. Ni
  • , Z. J. Zhang
  • , L. L. Wang
  • , X. D. Li
  • , P. S. Guo
  • , W. X. Que
  • *此作品的通讯作者
  • East China Normal University
  • Nanyang Technological University

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

Separated AlxIn1-xN quantum dots (QDs) embedded in amorphous AlN films have been produced by radio-frequency co-sputtering technique on silicon (1 1 1) and quartz glass substrates. The mean size and density of AlxIn1-xN QDs can be conveniently monitored by deposition parameters. Transparent electron microscope, and X-ray diffraction were used to detect the structure of the AlxIn1-xN QDs system; field-emission scanning-electron microscope was adopted to measure the surface morphology and anticipate the size of the QDs; X-ray photoelectronic spectroscopy was used to measure the stoichiometric ratios of the QDs.

源语言英语
页(从-至)200-203
页数4
期刊Physica E: Low-Dimensional Systems and Nanostructures
卷31
期2
DOI
出版状态已出版 - 3月 2006

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