@inproceedings{874e00fa9c0c444887ec4474740a4b69,
title = "Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials",
abstract = "In this paper, we report a high performance, forming-free and self-rectifying unipolar HfO x based RRAM fabricated by fab-available materials. Highlight of the demonstrated RRAM include 1) CMOS technology friendly materials and process, 2) excellent self-rectifying behavior in LRS (>10 3 @ 1 V), 3) forming-free unipolar resistive switching, 4) wide read-out margin for high density cross-point memory devices (number of word-line >10 6 for worst case condition).",
author = "Tran, \{X. A.\} and B. Gao and Kang, \{J. F.\} and X. Wu and L. Wu and Z. Fang and Wang, \{Z. R.\} and Pey, \{K. L.\} and Yeo, \{Y. C.\} and Du, \{A. Y.\} and M. Liu and Nguyen, \{B. Y.\} and Li, \{M. F.\} and Yu, \{H. Y.\}",
year = "2011",
doi = "10.1109/IEDM.2011.6131648",
language = "英语",
isbn = "9781457705052",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
pages = "31.2.1--31.2.4",
booktitle = "2011 International Electron Devices Meeting, IEDM 2011",
note = "2011 IEEE International Electron Devices Meeting, IEDM 2011 ; Conference date: 05-12-2011 Through 07-12-2011",
}