Selective fabrication of n- and p-type SnO films without doping

Hiroyuki Hayashi; Shota Katayama; Rong Huang; Kosuke Kurushima; Isao Tanaka

doi:10.1002/pssr.201510016

Selective fabrication of n- and p-type SnO films without doping

Hiroyuki Hayashi^*
, Shota Katayama
, Rong Huang
, Kosuke Kurushima
, Isao Tanaka

^*此作品的通讯作者

物理与电子科学学院

Kyoto University
Toray Industries, Inc.

科研成果: 期刊稿件 › 文章 › 同行评审

23 引用（Scopus）

摘要

Undoped n- and p-type tin monoxide (SnO) films have been selectively fabricated by pulsed laser deposition with a Sn target and careful control of oxygen partial pressure. The films are epitaxially grown in optimal growth conditions on yttria-stabilized zirconia (YSZ) substrates with out-of-plane and in-plane orientation relationships of (001)_SnO//(001)_YSZ and [110]_SnO//[100]_YSZ, respectively. Both Seebeck and Hall measurements show consistent results on the carrier types of the films. The electron Hall mobility is approximately 11 cm²/Vs at room temperature and the carrier activation energy is 0.14 eV for the n-type film. The growth at increased oxygen partial pressure yields p-type films, demonstrating the selective fabrication of both n- and p-type SnO films without doping.

源语言	英语
页（从-至）	192-196
页数	5
期刊	Physica Status Solidi - Rapid Research Letters
卷	9
期	3
DOI	https://doi.org/10.1002/pssr.201510016
出版状态	已出版 - 1 3月 2015

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10.1002/pssr.201510016

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title = "Selective fabrication of n- and p-type SnO films without doping",

abstract = "Undoped n- and p-type tin monoxide (SnO) films have been selectively fabricated by pulsed laser deposition with a Sn target and careful control of oxygen partial pressure. The films are epitaxially grown in optimal growth conditions on yttria-stabilized zirconia (YSZ) substrates with out-of-plane and in-plane orientation relationships of (001)SnO//(001)YSZ and [110]SnO//[100]YSZ, respectively. Both Seebeck and Hall measurements show consistent results on the carrier types of the films. The electron Hall mobility is approximately 11 cm2/Vs at room temperature and the carrier activation energy is 0.14 eV for the n-type film. The growth at increased oxygen partial pressure yields p-type films, demonstrating the selective fabrication of both n- and p-type SnO films without doping.",

keywords = "Epitaxial growth, Optical transmission, Oxide semiconductors, Oxygen partial pressure, Pulsed laser deposition, SnO, Thin films",

author = "Hiroyuki Hayashi and Shota Katayama and Rong Huang and Kosuke Kurushima and Isao Tanaka",

note = "Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

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doi = "10.1002/pssr.201510016",

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T1 - Selective fabrication of n- and p-type SnO films without doping

AU - Hayashi, Hiroyuki

AU - Katayama, Shota

AU - Huang, Rong

AU - Kurushima, Kosuke

AU - Tanaka, Isao

PY - 2015/3/1

Y1 - 2015/3/1

N2 - Undoped n- and p-type tin monoxide (SnO) films have been selectively fabricated by pulsed laser deposition with a Sn target and careful control of oxygen partial pressure. The films are epitaxially grown in optimal growth conditions on yttria-stabilized zirconia (YSZ) substrates with out-of-plane and in-plane orientation relationships of (001)SnO//(001)YSZ and [110]SnO//[100]YSZ, respectively. Both Seebeck and Hall measurements show consistent results on the carrier types of the films. The electron Hall mobility is approximately 11 cm2/Vs at room temperature and the carrier activation energy is 0.14 eV for the n-type film. The growth at increased oxygen partial pressure yields p-type films, demonstrating the selective fabrication of both n- and p-type SnO films without doping.

AB - Undoped n- and p-type tin monoxide (SnO) films have been selectively fabricated by pulsed laser deposition with a Sn target and careful control of oxygen partial pressure. The films are epitaxially grown in optimal growth conditions on yttria-stabilized zirconia (YSZ) substrates with out-of-plane and in-plane orientation relationships of (001)SnO//(001)YSZ and [110]SnO//[100]YSZ, respectively. Both Seebeck and Hall measurements show consistent results on the carrier types of the films. The electron Hall mobility is approximately 11 cm2/Vs at room temperature and the carrier activation energy is 0.14 eV for the n-type film. The growth at increased oxygen partial pressure yields p-type films, demonstrating the selective fabrication of both n- and p-type SnO films without doping.

KW - Epitaxial growth

KW - Optical transmission

KW - Oxide semiconductors

KW - Oxygen partial pressure

KW - Pulsed laser deposition

KW - SnO

KW - Thin films

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DO - 10.1002/pssr.201510016

M3 - 文章

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JO - Physica Status Solidi - Rapid Research Letters

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Selective fabrication of n- and p-type SnO films without doping

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