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Scattering times in AlGaN/GaN two-dimensional electron gas from magnetotransport measurements

  • Z. J. Qiu*
  • , Y. S. Gui
  • , T. Lin
  • , J. Lu
  • , N. Tang
  • , B. Shen
  • , N. Dai
  • , J. H. Chu
  • *此作品的通讯作者
  • CAS - Shanghai Institute of Technical Physics
  • Nanjing University

科研成果: 期刊稿件文章同行评审

摘要

The various scattering times of two-dimensional electron gas were investigated in modulation-doped Al0.22Ga0.78N/GaN quantum wells by means of magnetotransport measurements. The ratio of transport and quantum scattering times, τtq∼1, shows that the dominant mobility-limiting mechanisms are short-range scattering potentials. The low-field magnetoresistance shows the weak antilocalization and localization phenomenon from which the spin-orbit scattering and inelastic scattering times are obtained. The inelastic scattering time is found to follow the T-1 law, indicating that electron-electron scattering with small energy transfer is the dominant inelastic process.

源语言英语
页(从-至)37-40
页数4
期刊Solid State Communications
131
1
DOI
出版状态已出版 - 7月 2004
已对外发布

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