Scalable small-signal and noise modeling for deep-submicrometer MOSFETs

A new scalable noise and small-signal model for deep-submicrometer metaloxide semiconductor field-effect transistors, which consist of multiple elementary cells is presented in this paper. It allows exact modeling of all noise and small-signal model parameters from elementary cell to large-size device. The scalable rules for noise and small-signal model parameters are given in detail. The experimental and theoretical results show that at same bias condition, good scaling of the noise, and small-signal model parameters can be achieved between the large-size devices and elementary cell. Model verification is carried out by comparison of measured and simulated S-parameters and noise parameters. Good agreement is obtained between the measured and modeled results for 4 × 0.6 × 18 μm, 8 × 0.6 × 12 μm, and 32 × 0.6 × 2 μm gatewidth (number of gate fingers × unit gatewidth × cells) 90-nm gatelength MOSFETs.