Room temperature H2 detection based on Pd/SiNWs/p-Si Schottky diode structure

L. S. Zhu; J. Zhang; X. W. Xu; Y. Z. Yu; X. Wu; T. Yang; X. H. Wang

doi:10.1016/j.snb.2015.12.080

Room temperature H₂ detection based on Pd/SiNWs/p-Si Schottky diode structure

L. S. Zhu
, J. Zhang^*
, X. W. Xu
, Y. Z. Yu
, X. Wu
, T. Yang
, X. H. Wang

^*此作品的通讯作者

通信与电子工程学院

East China Normal University

科研成果: 期刊稿件 › 文章 › 同行评审

18 引用（Scopus）

摘要

In this paper, the Schottky diode sensor composed of silicon nanowires (SiNWs) coated with palladium layers was used for room temperature H₂ detection. Pd films were deposited on silicon nanowire via electroless plating. The structural and morphological properties of the Pd/SiNWs were analyzed firstly. The current-voltage (I-V) curves of Pd/SiNWs Schottky diode structure were measured. Variations of the electrical current in the presence of H₂ at room temperature revealed that the diode sensors can sense H₂ in a wide range of concentration of 300-3000 ppm. This novel sensor has great potential for the detection of H₂ at room temperature.

源语言	英语
页（从-至）	515-523
页数	9
期刊	Sensors and Actuators B: Chemical
卷	227
DOI	https://doi.org/10.1016/j.snb.2015.12.080
出版状态	已出版 - 1 5月 2016

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10.1016/j.snb.2015.12.080

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title = "Room temperature H2 detection based on Pd/SiNWs/p-Si Schottky diode structure",

abstract = "In this paper, the Schottky diode sensor composed of silicon nanowires (SiNWs) coated with palladium layers was used for room temperature H2 detection. Pd films were deposited on silicon nanowire via electroless plating. The structural and morphological properties of the Pd/SiNWs were analyzed firstly. The current-voltage (I-V) curves of Pd/SiNWs Schottky diode structure were measured. Variations of the electrical current in the presence of H2 at room temperature revealed that the diode sensors can sense H2 in a wide range of concentration of 300-3000 ppm. This novel sensor has great potential for the detection of H2 at room temperature.",

keywords = "Electroless, Fixed potential amperometry, H detection, Pd/SiNWs, Room temperature",

author = "Zhu, \{L. S.\} and J. Zhang and Xu, \{X. W.\} and Yu, \{Y. Z.\} and X. Wu and T. Yang and Wang, \{X. H.\}",

year = "2016",

month = may,

day = "1",

doi = "10.1016/j.snb.2015.12.080",

language = "英语",

volume = "227",

pages = "515--523",

journal = "Sensors and Actuators B: Chemical",

issn = "0925-4005",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Room temperature H2 detection based on Pd/SiNWs/p-Si Schottky diode structure

AU - Zhu, L. S.

AU - Zhang, J.

AU - Xu, X. W.

AU - Yu, Y. Z.

AU - Wu, X.

AU - Yang, T.

AU - Wang, X. H.

PY - 2016/5/1

Y1 - 2016/5/1

N2 - In this paper, the Schottky diode sensor composed of silicon nanowires (SiNWs) coated with palladium layers was used for room temperature H2 detection. Pd films were deposited on silicon nanowire via electroless plating. The structural and morphological properties of the Pd/SiNWs were analyzed firstly. The current-voltage (I-V) curves of Pd/SiNWs Schottky diode structure were measured. Variations of the electrical current in the presence of H2 at room temperature revealed that the diode sensors can sense H2 in a wide range of concentration of 300-3000 ppm. This novel sensor has great potential for the detection of H2 at room temperature.

AB - In this paper, the Schottky diode sensor composed of silicon nanowires (SiNWs) coated with palladium layers was used for room temperature H2 detection. Pd films were deposited on silicon nanowire via electroless plating. The structural and morphological properties of the Pd/SiNWs were analyzed firstly. The current-voltage (I-V) curves of Pd/SiNWs Schottky diode structure were measured. Variations of the electrical current in the presence of H2 at room temperature revealed that the diode sensors can sense H2 in a wide range of concentration of 300-3000 ppm. This novel sensor has great potential for the detection of H2 at room temperature.

KW - Electroless

KW - Fixed potential amperometry

KW - H detection

KW - Pd/SiNWs

KW - Room temperature

UR - https://www.scopus.com/pages/publications/84953898354

U2 - 10.1016/j.snb.2015.12.080

DO - 10.1016/j.snb.2015.12.080

M3 - 文章

AN - SCOPUS:84953898354

SN - 0925-4005

VL - 227

SP - 515

EP - 523

JO - Sensors and Actuators B: Chemical

JF - Sensors and Actuators B: Chemical

ER -

Room temperature H2 detection based on Pd/SiNWs/p-Si Schottky diode structure

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Room temperature H₂ detection based on Pd/SiNWs/p-Si Schottky diode structure