Role of oxygen vacancies in HfO2 -based gate stack breakdown

X. Wu; D. B. Migas; X. Li; M. Bosman; N. Raghavan; V. E. Borisenko; K. L. Pey

doi:10.1063/1.3416912

Role of oxygen vacancies in HfO₂ -based gate stack breakdown

X. Wu^*
, D. B. Migas
, X. Li
, M. Bosman
, N. Raghavan
, V. E. Borisenko
, K. L. Pey

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

46 引用（Scopus）

摘要

We study the influence of multiple oxygen vacancy traps in the percolated dielectric on the postbreakdown random telegraph noise (RTN) digital fluctuations in HfO₂ -based metal-oxide-semiconductor transistors. Our electrical characterization results indicate that these digital fluctuations are triggered only beyond a certain gate stress voltage. First-principles calculations suggest the oxygen vacancies to be responsible for the formation of a subband in the forbidden band gap region, which affects the triggering voltage (V_TRIG) for the RTN fluctuations and leads to a shrinkage of the HfO₂ band gap.

源语言	英语
文章编号	172901
期刊	Applied Physics Letters
卷	96
期	17
DOI	https://doi.org/10.1063/1.3416912
出版状态	已出版 - 26 4月 2010
已对外发布	是

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10.1063/1.3416912

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title = "Role of oxygen vacancies in HfO2 -based gate stack breakdown",

abstract = "We study the influence of multiple oxygen vacancy traps in the percolated dielectric on the postbreakdown random telegraph noise (RTN) digital fluctuations in HfO2 -based metal-oxide-semiconductor transistors. Our electrical characterization results indicate that these digital fluctuations are triggered only beyond a certain gate stress voltage. First-principles calculations suggest the oxygen vacancies to be responsible for the formation of a subband in the forbidden band gap region, which affects the triggering voltage (VTRIG) for the RTN fluctuations and leads to a shrinkage of the HfO2 band gap.",

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AU - Wu, X.

AU - Migas, D. B.

AU - Li, X.

AU - Bosman, M.

AU - Raghavan, N.

AU - Borisenko, V. E.

AU - Pey, K. L.

PY - 2010/4/26

Y1 - 2010/4/26

N2 - We study the influence of multiple oxygen vacancy traps in the percolated dielectric on the postbreakdown random telegraph noise (RTN) digital fluctuations in HfO2 -based metal-oxide-semiconductor transistors. Our electrical characterization results indicate that these digital fluctuations are triggered only beyond a certain gate stress voltage. First-principles calculations suggest the oxygen vacancies to be responsible for the formation of a subband in the forbidden band gap region, which affects the triggering voltage (VTRIG) for the RTN fluctuations and leads to a shrinkage of the HfO2 band gap.

AB - We study the influence of multiple oxygen vacancy traps in the percolated dielectric on the postbreakdown random telegraph noise (RTN) digital fluctuations in HfO2 -based metal-oxide-semiconductor transistors. Our electrical characterization results indicate that these digital fluctuations are triggered only beyond a certain gate stress voltage. First-principles calculations suggest the oxygen vacancies to be responsible for the formation of a subband in the forbidden band gap region, which affects the triggering voltage (VTRIG) for the RTN fluctuations and leads to a shrinkage of the HfO2 band gap.

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DO - 10.1063/1.3416912

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VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 172901

ER -

Role of oxygen vacancies in HfO2 -based gate stack breakdown

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Role of oxygen vacancies in HfO₂ -based gate stack breakdown