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Retention trimming for wear reduction of flash memory storage systems

  • Chongqing University
  • City University of Hong Kong

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

NAND flash memory has been widely applied in embedded systems, personal computer systems, and data centers. However, with the development of flash memory, including its technology scaling and density improvement, the endurance of flash memory becomes a bottleneck. In this work, with the understanding of the relationship between data retention time and flash wearing, a retention trimming approach, which trims data retention time based on the time intervals between data updating, is proposed to reduce the wearing of flash memory. Reduced wearing of flash memory will improve the endurance of the flash memory. Extensive experimental results show that the proposed technique achieves significant wearing reduction for flash memory through retention trimming.

源语言英语
主期刊名DAC 2014 - 51st Design Automation Conference, Conference Proceedings
出版商Institute of Electrical and Electronics Engineers Inc.
ISBN(印刷版)9781479930173
DOI
出版状态已出版 - 2014
已对外发布
活动51st Annual Design Automation Conference, DAC 2014 - San Francisco, CA, 美国
期限: 2 6月 20145 6月 2014

出版系列

姓名Proceedings - Design Automation Conference
ISSN(印刷版)0738-100X

会议

会议51st Annual Design Automation Conference, DAC 2014
国家/地区美国
San Francisco, CA
时期2/06/145/06/14

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