Retention characteristics of Au/Bi3.25La0.75Ti 3O12/Si metal-ferro- electric-semiconductor structure

J. L. Sun; X. J. Meng; J. H. Ma; T. Lin; J. Chen; N. Dai; J. H. Chu

doi:10.1007/s00339-004-2564-7

Retention characteristics of Au/Bi_3.25La_0.75Ti ₃O₁₂/Si metal-ferro- electric-semiconductor structure

J. L. Sun^*
, X. J. Meng
, J. H. Ma
, T. Lin
, J. Chen
, N. Dai
, J. H. Chu

^*此作品的通讯作者

CAS - Shanghai Institute of Technical Physics

科研成果: 期刊稿件 › 文章 › 同行评审

2 引用（Scopus）

摘要

Lanthanum-substituted bismuth titanate (Bi_3.25La _0.75Ti₃O₁₂) (BLT) thin films were deposited on p-type Si(100) substrates using a chemical solution deposition process. The ferroelectric and dielectric properties of the films with an Au/BLT/Si structure were investigated. It was found that retention behaviors of the capacitors after polling with a negative and positive voltage were very different. The capacitor at an accumulation state exhibited a better retention characteristic than that at a depletion state. A rapid loss of memory for the capacitor at depletion state was found and attributed to the depolarization fields inside the ferroelectric film. It is proposed that the interaction between injected charges and ferroelectric polarization plays a role in the retention properties of the MFS capacitors.

源语言	英语
页（从-至）	389-392
页数	4
期刊	Applied Physics A: Materials Science and Processing
卷	81
期	2
DOI	https://doi.org/10.1007/s00339-004-2564-7
出版状态	已出版 - 7月 2005
已对外发布	是

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title = "Retention characteristics of Au/Bi3.25La0.75Ti 3O12/Si metal-ferro- electric-semiconductor structure",

abstract = "Lanthanum-substituted bismuth titanate (Bi3.25La 0.75Ti3O12) (BLT) thin films were deposited on p-type Si(100) substrates using a chemical solution deposition process. The ferroelectric and dielectric properties of the films with an Au/BLT/Si structure were investigated. It was found that retention behaviors of the capacitors after polling with a negative and positive voltage were very different. The capacitor at an accumulation state exhibited a better retention characteristic than that at a depletion state. A rapid loss of memory for the capacitor at depletion state was found and attributed to the depolarization fields inside the ferroelectric film. It is proposed that the interaction between injected charges and ferroelectric polarization plays a role in the retention properties of the MFS capacitors.",

author = "Sun, \{J. L.\} and Meng, \{X. J.\} and Ma, \{J. H.\} and T. Lin and J. Chen and N. Dai and Chu, \{J. H.\}",

year = "2005",

month = jul,

doi = "10.1007/s00339-004-2564-7",

language = "英语",

volume = "81",

pages = "389--392",

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TY - JOUR

T1 - Retention characteristics of Au/Bi3.25La0.75Ti 3O12/Si metal-ferro- electric-semiconductor structure

AU - Sun, J. L.

AU - Meng, X. J.

AU - Ma, J. H.

AU - Lin, T.

AU - Chen, J.

AU - Dai, N.

AU - Chu, J. H.

PY - 2005/7

Y1 - 2005/7

N2 - Lanthanum-substituted bismuth titanate (Bi3.25La 0.75Ti3O12) (BLT) thin films were deposited on p-type Si(100) substrates using a chemical solution deposition process. The ferroelectric and dielectric properties of the films with an Au/BLT/Si structure were investigated. It was found that retention behaviors of the capacitors after polling with a negative and positive voltage were very different. The capacitor at an accumulation state exhibited a better retention characteristic than that at a depletion state. A rapid loss of memory for the capacitor at depletion state was found and attributed to the depolarization fields inside the ferroelectric film. It is proposed that the interaction between injected charges and ferroelectric polarization plays a role in the retention properties of the MFS capacitors.

AB - Lanthanum-substituted bismuth titanate (Bi3.25La 0.75Ti3O12) (BLT) thin films were deposited on p-type Si(100) substrates using a chemical solution deposition process. The ferroelectric and dielectric properties of the films with an Au/BLT/Si structure were investigated. It was found that retention behaviors of the capacitors after polling with a negative and positive voltage were very different. The capacitor at an accumulation state exhibited a better retention characteristic than that at a depletion state. A rapid loss of memory for the capacitor at depletion state was found and attributed to the depolarization fields inside the ferroelectric film. It is proposed that the interaction between injected charges and ferroelectric polarization plays a role in the retention properties of the MFS capacitors.

UR - https://www.scopus.com/pages/publications/18844414262

U2 - 10.1007/s00339-004-2564-7

DO - 10.1007/s00339-004-2564-7

M3 - 文章

AN - SCOPUS:18844414262

SN - 0947-8396

VL - 81

SP - 389

EP - 392

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 2

ER -

Retention characteristics of Au/Bi3.25La0.75Ti 3O12/Si metal-ferro- electric-semiconductor structure

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Retention characteristics of Au/Bi_3.25La_0.75Ti ₃O₁₂/Si metal-ferro- electric-semiconductor structure