Response time and capture cross section of the gap states in the un-doped α-Si:H

Kun Liu; Junhao Chu; Biao Li; Dingyuan Tang

Response time and capture cross section of the gap states in the un-doped α-Si:H

Kun Liu^*
, Junhao Chu
, Biao Li
, Dingyuan Tang

^*此作品的通讯作者

CAS - Shanghai Institute of Technical Physics

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

The metal-insulator-semiconductor (MIS) structure of a-Si:H has been made, and from which, the capacitance - voltage (C - V) and conductance - voltage (G - V) characteristics have been measured at 50°C and in the dark background. By revising the influence of the series resistance and the deep levels in the a-Si:H MIS device and from the general theory of MIS structures, the electron response time constant and the capture cross-section of the gap states have been obtained, which are in good agreement with other authors'.

源语言	英语
页（从-至）	236-240
页数	5
期刊	Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
卷	14
期	3
出版状态	已出版 - 8月 1994
已对外发布	是

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{d4c6a8dfe2d647ebb0912ed3002534a0,

title = "Response time and capture cross section of the gap states in the un-doped α-Si:H",

abstract = "The metal-insulator-semiconductor (MIS) structure of a-Si:H has been made, and from which, the capacitance - voltage (C - V) and conductance - voltage (G - V) characteristics have been measured at 50°C and in the dark background. By revising the influence of the series resistance and the deep levels in the a-Si:H MIS device and from the general theory of MIS structures, the electron response time constant and the capture cross-section of the gap states have been obtained, which are in good agreement with other authors'.",

author = "Kun Liu and Junhao Chu and Biao Li and Dingyuan Tang",

year = "1994",

month = aug,

language = "英语",

volume = "14",

pages = "236--240",

journal = "Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics",

issn = "1000-3819",

publisher = "Research Progress of Solid State Electronics",

number = "3",

}

TY - JOUR

T1 - Response time and capture cross section of the gap states in the un-doped α-Si:H

AU - Liu, Kun

AU - Chu, Junhao

AU - Li, Biao

AU - Tang, Dingyuan

PY - 1994/8

Y1 - 1994/8

N2 - The metal-insulator-semiconductor (MIS) structure of a-Si:H has been made, and from which, the capacitance - voltage (C - V) and conductance - voltage (G - V) characteristics have been measured at 50°C and in the dark background. By revising the influence of the series resistance and the deep levels in the a-Si:H MIS device and from the general theory of MIS structures, the electron response time constant and the capture cross-section of the gap states have been obtained, which are in good agreement with other authors'.

AB - The metal-insulator-semiconductor (MIS) structure of a-Si:H has been made, and from which, the capacitance - voltage (C - V) and conductance - voltage (G - V) characteristics have been measured at 50°C and in the dark background. By revising the influence of the series resistance and the deep levels in the a-Si:H MIS device and from the general theory of MIS structures, the electron response time constant and the capture cross-section of the gap states have been obtained, which are in good agreement with other authors'.

UR - https://www.scopus.com/pages/publications/0028494183

M3 - 文章

AN - SCOPUS:0028494183

SN - 1000-3819

VL - 14

SP - 236

EP - 240

JO - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

JF - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

IS - 3

ER -

Response time and capture cross section of the gap states in the un-doped α-Si:H

摘要

其它文件与链接

学术指纹

引用此