Relationship between the resistance and temperature in the high temperature region for the Hg_1-xCd_xTe photoconductors

The expressions for carrier concentration, mobility and resistance versus composition were derived for n-HgCdTe with the electrical parameters measured in the range of 200-300K. The results obtained are in agreement with that from the infrared transmission measurement. It is an useful method to determine the composition from the relationship between resistance and temperature of HgCdTe photo-conducting elements without the need of knowing the exact value of resistance, hence an effective method for determining the performance and uniformity of the HgCdTe photoconductive detectors was provided.