Rectifying characteristic of Pt/TiO_x/metal/Pt controlled by electronegativity

Current voltage characteristic of the TiO_x /metal interface has been studied by the systematic investigation on the top electrode (TE) material dependence of the carrier transport through the TiO_x /metal interface. Rather than work function of TE (φ_M), electronegativity (χ_M) of TE plays a dominant role on current conduction and carrier transport of Pt/TiO_x/metal (TE) devices. Pt/ TiO_x /metal (TE) exhibits rectifying property, if χ_M of TE is high. On the other hands, a symmetric I-V curves were observed if χ_M of TE is low. Plots of Schottky barrier at TiO_x /metal (TE) interface versus χ_M of TE provides an index of interface behavior S≈0.55, suggesting partial Fermi-level pinning at TiO _x /metal interface.