Recent progress on HgCdTe at the national laboratory for infrared physics in China

The characterization of impurities, defects, uniformity and some fundamental properties for the bulk and epitaxial HgCdTe (MCT) material, undoped and doped with Sb, As, Fe, have been investigated recently in the authors' laboratory by means of photoluminescence, magneto-photoconductivity, quantum capacitance spectroscopy, transport measurements, and other contactless and nondestructive methods such as the infrared, far-infrared, and millimeter wave measurements. This paper reports a portion of these new results.