@inproceedings{1fb1ff00215549a9bba77d5899569f09,
title = "Reactive ion etching effects on carbon-doped Ge2Sb2Te5 phase change material in CF4/Ar plasma",
abstract = "Recently, carbon-doped Ge2Sb2Te5 (CGST) has been proved to be a high promising material for future phase change memory technology. In this article, reactive ion etching (RIE) of phase change material CGST films is studied using CF4/Ar gas mixture. The effects on gas-mixing ratio, RF power, gas pressure on the etch rate, etch profile and roughness of the CGST film are investigated. Conventional phase change material Ge2Sb2Te5 (GST) films are simultaneously studied for comparison. Compared with GST film, 10 \% more CF4 is needed for high etch rate and 10\% less CF4 for good anisotropy of CGST due to more fluorocarbon polymer deposition during CF4 etching. The trends of etch rates and roughness of CGST with varying RF power and chamber pressure are similar with those of GST. Furthermore, the etch rate of CGST are more easily to be saturated when higher RF power is applied.",
author = "Lanlan Shen and Sannian Song and Songlin Feng and Le Li and Tianqi Guo and Bo Liu and Liangcai Wu and Yan Cheng",
note = "Publisher Copyright: {\textcopyright} 2016 SPIE.; 2016 International Workshop on Information Data Storage and 10th International Symposium on Optical Storage, IWIS/ISOS 2016 ; Conference date: 10-04-2016 Through 13-04-2016",
year = "2016",
doi = "10.1117/12.2245726",
language = "英语",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Fuxi Gan and Zhitang Song",
booktitle = "2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage",
address = "美国",
}