Reactive deposition epitaxial growth of/?-fesi3 film on si(001): In situ observation by reflective high energy electron diffraction

Wang A.N.G. Lianwei; Lin I.N. Chenglu; Shen H.E.N. Qinwo; N. I. Rushan

doi:10.1088/0256-307X/12/10/010

Reactive deposition epitaxial growth of/?-fesi3 film on si(001): In situ observation by reflective high energy electron diffraction

Wang A.N.G. Lianwei
, Lin I.N. Chenglu
, Shen H.E.N. Qinwo
, N. I. Rushan

CAS - Shanghai Institute of Microsystem and Information Technology

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

Reactive deposition epitaxial growth of fi-FeSii film on Si(001) has been studied by in situ observation of reflective high energy electron diffraction. Metastable strained phase was observed at initial stages. Surface roughness due to the islanding was observed during the deposition. The existed great tendency to transform the alignment of the orientation of crystallites into random as the thickness of deposited iron increased.

源语言	英语
页（从-至）	601-604
页数	4
期刊	Chinese Physics Letters
卷	12
期	10
DOI	https://doi.org/10.1088/0256-307X/12/10/010
出版状态	已出版 - 10月 1995
已对外发布	是

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title = "Reactive deposition epitaxial growth of/?-fesi3 film on si(001): In situ observation by reflective high energy electron diffraction",

abstract = "Reactive deposition epitaxial growth of fi-FeSii film on Si(001) has been studied by in situ observation of reflective high energy electron diffraction. Metastable strained phase was observed at initial stages. Surface roughness due to the islanding was observed during the deposition. The existed great tendency to transform the alignment of the orientation of crystallites into random as the thickness of deposited iron increased.",

author = "Lianwei, \{Wang A.N.G.\} and Chenglu, \{Lin I.N.\} and Qinwo, \{Shen H.E.N.\} and Rushan, \{N. I.\}",

year = "1995",

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doi = "10.1088/0256-307X/12/10/010",

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T2 - In situ observation by reflective high energy electron diffraction

AU - Lianwei, Wang A.N.G.

AU - Chenglu, Lin I.N.

AU - Qinwo, Shen H.E.N.

AU - Rushan, N. I.

PY - 1995/10

Y1 - 1995/10

N2 - Reactive deposition epitaxial growth of fi-FeSii film on Si(001) has been studied by in situ observation of reflective high energy electron diffraction. Metastable strained phase was observed at initial stages. Surface roughness due to the islanding was observed during the deposition. The existed great tendency to transform the alignment of the orientation of crystallites into random as the thickness of deposited iron increased.

AB - Reactive deposition epitaxial growth of fi-FeSii film on Si(001) has been studied by in situ observation of reflective high energy electron diffraction. Metastable strained phase was observed at initial stages. Surface roughness due to the islanding was observed during the deposition. The existed great tendency to transform the alignment of the orientation of crystallites into random as the thickness of deposited iron increased.

UR - https://www.scopus.com/pages/publications/84956234355

U2 - 10.1088/0256-307X/12/10/010

DO - 10.1088/0256-307X/12/10/010

M3 - 文章

AN - SCOPUS:84956234355

SN - 0256-307X

VL - 12

SP - 601

EP - 604

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 10

ER -

Reactive deposition epitaxial growth of/?-fesi3 film on si(001): In situ observation by reflective high energy electron diffraction

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