Radio-Frequency modeling and parameters extraction of multi-cell MOSFET device

Ying Zhou; Pan Pan Yu; Jian Jun Gao

doi:10.11972/j.issn.1001-9014.2017.05.007

Radio-Frequency modeling and parameters extraction of multi-cell MOSFET device

Ying Zhou
, Pan Pan Yu
, Jian Jun Gao^*

^*此作品的通讯作者

物理与电子科学学院

East China Normal University

科研成果: 期刊稿件 › 文章 › 同行评审

3 引用（Scopus）

摘要

An improved small-signal model for nanometer metal-oxide-semiconductor field-effect transistor (MOSFET) device is presented in this paper. The skin effect and multiple-cell effect are both taken into account. In the extracting procedure, the parameters of elementary cells are determined from the conventional model based on the scalable rules. This small-signal model was validated by the good agreement between measured and simulated S-parameters of 8×0.6×12 μm (number of gate fingers×unit gatewidth×cells) 90-nm gatelength MOSFET under three bias points up to 40 GHz.

源语言	英语
页（从-至）	550-553 and 562
期刊	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
卷	36
期	5
DOI	https://doi.org/10.11972/j.issn.1001-9014.2017.05.007
出版状态	已出版 - 1 10月 2017

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title = "Radio-Frequency modeling and parameters extraction of multi-cell MOSFET device",

abstract = "An improved small-signal model for nanometer metal-oxide-semiconductor field-effect transistor (MOSFET) device is presented in this paper. The skin effect and multiple-cell effect are both taken into account. In the extracting procedure, the parameters of elementary cells are determined from the conventional model based on the scalable rules. This small-signal model was validated by the good agreement between measured and simulated S-parameters of 8×0.6×12 μm (number of gate fingers×unit gatewidth×cells) 90-nm gatelength MOSFET under three bias points up to 40 GHz.",

keywords = "Multi-cell model, Parameter extraction of model, Semi-conductor technology, Skin effect, Small-signal model",

author = "Ying Zhou and Yu, \{Pan Pan\} and Gao, \{Jian Jun\}",

year = "2017",

month = oct,

day = "1",

doi = "10.11972/j.issn.1001-9014.2017.05.007",

language = "英语",

volume = "36",

pages = "550--553 and 562",

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TY - JOUR

T1 - Radio-Frequency modeling and parameters extraction of multi-cell MOSFET device

AU - Zhou, Ying

AU - Yu, Pan Pan

AU - Gao, Jian Jun

PY - 2017/10/1

Y1 - 2017/10/1

N2 - An improved small-signal model for nanometer metal-oxide-semiconductor field-effect transistor (MOSFET) device is presented in this paper. The skin effect and multiple-cell effect are both taken into account. In the extracting procedure, the parameters of elementary cells are determined from the conventional model based on the scalable rules. This small-signal model was validated by the good agreement between measured and simulated S-parameters of 8×0.6×12 μm (number of gate fingers×unit gatewidth×cells) 90-nm gatelength MOSFET under three bias points up to 40 GHz.

AB - An improved small-signal model for nanometer metal-oxide-semiconductor field-effect transistor (MOSFET) device is presented in this paper. The skin effect and multiple-cell effect are both taken into account. In the extracting procedure, the parameters of elementary cells are determined from the conventional model based on the scalable rules. This small-signal model was validated by the good agreement between measured and simulated S-parameters of 8×0.6×12 μm (number of gate fingers×unit gatewidth×cells) 90-nm gatelength MOSFET under three bias points up to 40 GHz.

KW - Multi-cell model

KW - Parameter extraction of model

KW - Semi-conductor technology

KW - Skin effect

KW - Small-signal model

UR - https://www.scopus.com/pages/publications/85039547478

U2 - 10.11972/j.issn.1001-9014.2017.05.007

DO - 10.11972/j.issn.1001-9014.2017.05.007

M3 - 文章

AN - SCOPUS:85039547478

SN - 1001-9014

VL - 36

SP - 550-553 and 562

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 5

ER -

Radio-Frequency modeling and parameters extraction of multi-cell MOSFET device

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