Quantum and transport scattering times in modulation-doped Al xGa1-xN/GaN single quantum wells

Z. W. Zheng; B. Shen; Z. J. Qiu; Y. S. Gui; N. Tang; J. Liu; D. J. Chen; R. Zhang; Y. Shi; Y. D. Zheng; S. L. Guo; J. H. Chu; K. Hoshino; Y. Arakawa

doi:10.1007/s00339-004-2928-z

Quantum and transport scattering times in modulation-doped Al _xGa_1-xN/GaN single quantum wells

Z. W. Zheng
, B. Shen^*
, Z. J. Qiu
, Y. S. Gui
, N. Tang
, J. Liu
, D. J. Chen
, R. Zhang
, Y. Shi
, Y. D. Zheng
, S. L. Guo
, J. H. Chu
, K. Hoshino
, Y. Arakawa

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

Quantum and transport scattering times related to different subbands in modulation-doped Al_0.22Ga_0.78N/GaN single quantum wells (SQW) have been studied by magneto-transport measurements. The quantum scattering time related to the first and the second subbands is determined to be 0.078 ps and 0.088 ps, respectively, at 1.5 K. Results indicate that the scatterings from heterointerface and ionized donors at both side of GaN well are all important in limiting quantum scattering time. By using mobility spectrum technique the transport scattering time related to the first subband is determined to be 0.128 ps. Transport-to-quantum scattering time ratio in the first subband is 1.6. It is concluded the large angle scatterings play a very important role in limiting quantum scattering time in this SQW.

源语言	英语
页（从-至）	39-42
页数	4
期刊	Applied Physics A: Materials Science and Processing
卷	80
期	1
DOI	https://doi.org/10.1007/s00339-004-2928-z
出版状态	已出版 - 1月 2005
已对外发布	是

访问文件

10.1007/s00339-004-2928-z

其它文件与链接

链接到 Scopus 的出版物

引用此

Zheng, Z. W., Shen, B., Qiu, Z. J., Gui, Y. S., Tang, N., Liu, J., Chen, D. J., Zhang, R., Shi, Y., Zheng, Y. D., Guo, S. L., Chu, J. H., Hoshino, K., & Arakawa, Y. (2005). Quantum and transport scattering times in modulation-doped Al _xGa_1-xN/GaN single quantum wells. Applied Physics A: Materials Science and Processing, 80(1), 39-42. https://doi.org/10.1007/s00339-004-2928-z

@article{8ceb17b4a6ca4f43bf0f242a9008d581,

title = "Quantum and transport scattering times in modulation-doped Al xGa1-xN/GaN single quantum wells",

abstract = "Quantum and transport scattering times related to different subbands in modulation-doped Al0.22Ga0.78N/GaN single quantum wells (SQW) have been studied by magneto-transport measurements. The quantum scattering time related to the first and the second subbands is determined to be 0.078 ps and 0.088 ps, respectively, at 1.5 K. Results indicate that the scatterings from heterointerface and ionized donors at both side of GaN well are all important in limiting quantum scattering time. By using mobility spectrum technique the transport scattering time related to the first subband is determined to be 0.128 ps. Transport-to-quantum scattering time ratio in the first subband is 1.6. It is concluded the large angle scatterings play a very important role in limiting quantum scattering time in this SQW.",

author = "Zheng, \{Z. W.\} and B. Shen and Qiu, \{Z. J.\} and Gui, \{Y. S.\} and N. Tang and J. Liu and Chen, \{D. J.\} and R. Zhang and Y. Shi and Zheng, \{Y. D.\} and Guo, \{S. L.\} and Chu, \{J. H.\} and K. Hoshino and Y. Arakawa",

year = "2005",

month = jan,

doi = "10.1007/s00339-004-2928-z",

language = "英语",

volume = "80",

pages = "39--42",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

publisher = "Springer Heidelberg",

number = "1",

}

TY - JOUR

T1 - Quantum and transport scattering times in modulation-doped Al xGa1-xN/GaN single quantum wells

AU - Zheng, Z. W.

AU - Shen, B.

AU - Qiu, Z. J.

AU - Gui, Y. S.

AU - Tang, N.

AU - Liu, J.

AU - Chen, D. J.

AU - Zhang, R.

AU - Shi, Y.

AU - Zheng, Y. D.

AU - Guo, S. L.

AU - Chu, J. H.

AU - Hoshino, K.

AU - Arakawa, Y.

PY - 2005/1

Y1 - 2005/1

N2 - Quantum and transport scattering times related to different subbands in modulation-doped Al0.22Ga0.78N/GaN single quantum wells (SQW) have been studied by magneto-transport measurements. The quantum scattering time related to the first and the second subbands is determined to be 0.078 ps and 0.088 ps, respectively, at 1.5 K. Results indicate that the scatterings from heterointerface and ionized donors at both side of GaN well are all important in limiting quantum scattering time. By using mobility spectrum technique the transport scattering time related to the first subband is determined to be 0.128 ps. Transport-to-quantum scattering time ratio in the first subband is 1.6. It is concluded the large angle scatterings play a very important role in limiting quantum scattering time in this SQW.

AB - Quantum and transport scattering times related to different subbands in modulation-doped Al0.22Ga0.78N/GaN single quantum wells (SQW) have been studied by magneto-transport measurements. The quantum scattering time related to the first and the second subbands is determined to be 0.078 ps and 0.088 ps, respectively, at 1.5 K. Results indicate that the scatterings from heterointerface and ionized donors at both side of GaN well are all important in limiting quantum scattering time. By using mobility spectrum technique the transport scattering time related to the first subband is determined to be 0.128 ps. Transport-to-quantum scattering time ratio in the first subband is 1.6. It is concluded the large angle scatterings play a very important role in limiting quantum scattering time in this SQW.

UR - https://www.scopus.com/pages/publications/10644241712

U2 - 10.1007/s00339-004-2928-z

DO - 10.1007/s00339-004-2928-z

M3 - 文章

AN - SCOPUS:10644241712

SN - 0947-8396

VL - 80

SP - 39

EP - 42

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 1

ER -

Quantum and transport scattering times in modulation-doped Al xGa1-xN/GaN single quantum wells

摘要

访问文件

其它文件与链接

指纹

引用此

Quantum and transport scattering times in modulation-doped Al _xGa_1-xN/GaN single quantum wells