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Quantitative mobility spectrum analysis on multi-carrier system in HgCdTe

  • Yongsheng Gui*
  • , Guozhen Zheng
  • , Xinchang Zhang
  • , Junhao Chu
  • *此作品的通讯作者

科研成果: 期刊稿件文章同行评审

摘要

By using quantitative mobility spectrum analysis (QMSA) technique, the free electron and hole concentrations and mobilities are determined from field-dependent Hall and resistivity data. The results confirm that the QMSA yields accurate and reliable concentrations and mobilities for all classes of carrier in the sample, and also has greater sensitivity to minority carrier concentrations. The QMSA is found to be a suitable standard tool for the routine electrical characterization of semiconductor materials and devices.

源语言英语
页(从-至)913-918
页数6
期刊Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
19
12
出版状态已出版 - 1998
已对外发布

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