摘要
By using quantitative mobility spectrum analysis (QMSA) technique, the free electron and hole concentrations and mobilities are determined from field-dependent Hall and resistivity data. The results confirm that the QMSA yields accurate and reliable concentrations and mobilities for all classes of carrier in the sample, and also has greater sensitivity to minority carrier concentrations. The QMSA is found to be a suitable standard tool for the routine electrical characterization of semiconductor materials and devices.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 913-918 |
| 页数 | 6 |
| 期刊 | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors |
| 卷 | 19 |
| 期 | 12 |
| 出版状态 | 已出版 - 1998 |
| 已对外发布 | 是 |
指纹
探究 'Quantitative mobility spectrum analysis on multi-carrier system in HgCdTe' 的科研主题。它们共同构成独一无二的指纹。引用此
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