PZT thin films prepared by chemical solution decomposition using a Bi₂Ti₂O₇ buffer layer

A thin-film bilayer structure consisting of polycrystalline Pb(Zr_0.5Ti_0.5)O₃ (PZT) and preferentially (111)-orientated Bi₂Ti₂O₇ were prepared using the chemical solution decomposition (CSD) technique followed by rapid thermal annealing (RTA). The effects of various annealing temperatures and times upon crystallization were investigated. The C-V and dielectric characteristics were measured. The PZT films annealed at 750°C for 10 min consist of a single perovskite phase. The value of leakage current density at 9 V is 3.79 × 10^-7 A/cm². The counterclockwise hysteresis curve observed shows that it is polarization-type switching. The PZT/Bi₂Ti₂O₇ film in the ON and OFF states is relatively stable.