Pulsed laser deposition and characteristics of SrBi2 TaNbO9 thin films

Pingxiong Yang; Lirong Zheng; Chenglu Lin; A. Pignolet; C. Curran; M. Alexe; D. Hesse

Pulsed laser deposition and characteristics of SrBi₂ TaNbO₉ thin films

Pingxiong Yang^*
, Lirong Zheng
, Chenglu Lin
, A. Pignolet
, C. Curran
, M. Alexe
, D. Hesse

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

1 引用（Scopus）

摘要

Ferroelectric SrBi₂ TaNbO₉ (SBTN) thin films were synthesized on the Si/SiO₂/Ti/Pt substrates by pulsed laser deposition (PLD), and the ferroelectric properties of SBTN films were studied. The high diffraction peak of (115) was characterized by x-ray diffractometer (XRD). The film exhibits good ferroelectric properties; the remnant polarization and coercive field were about 14 μC/cm² and 54 kV/cm, respectively. No fatigue was observed up to 10¹⁰ switching cycles. Switching current versus voltage (I-V) characteristic showed two peaks near the coercive field and a static dielectric constant of 400 at zero applied voltage.

源语言	英语
页（从-至）	S1383-S1385
期刊	Journal of the Korean Physical Society
卷	32
期	4 SUPPL.
出版状态	已出版 - 1998
已对外发布	是

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@article{87fe7d257e5e43729ee373d3ef3ea309,

title = "Pulsed laser deposition and characteristics of SrBi2 TaNbO9 thin films",

abstract = "Ferroelectric SrBi2 TaNbO9 (SBTN) thin films were synthesized on the Si/SiO2/Ti/Pt substrates by pulsed laser deposition (PLD), and the ferroelectric properties of SBTN films were studied. The high diffraction peak of (115) was characterized by x-ray diffractometer (XRD). The film exhibits good ferroelectric properties; the remnant polarization and coercive field were about 14 μC/cm2 and 54 kV/cm, respectively. No fatigue was observed up to 1010 switching cycles. Switching current versus voltage (I-V) characteristic showed two peaks near the coercive field and a static dielectric constant of 400 at zero applied voltage.",

author = "Pingxiong Yang and Lirong Zheng and Chenglu Lin and A. Pignolet and C. Curran and M. Alexe and D. Hesse",

year = "1998",

language = "英语",

volume = "32",

pages = "S1383--S1385",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "4 SUPPL.",

}

TY - JOUR

T1 - Pulsed laser deposition and characteristics of SrBi2 TaNbO9 thin films

AU - Yang, Pingxiong

AU - Zheng, Lirong

AU - Lin, Chenglu

AU - Pignolet, A.

AU - Curran, C.

AU - Alexe, M.

AU - Hesse, D.

PY - 1998

Y1 - 1998

N2 - Ferroelectric SrBi2 TaNbO9 (SBTN) thin films were synthesized on the Si/SiO2/Ti/Pt substrates by pulsed laser deposition (PLD), and the ferroelectric properties of SBTN films were studied. The high diffraction peak of (115) was characterized by x-ray diffractometer (XRD). The film exhibits good ferroelectric properties; the remnant polarization and coercive field were about 14 μC/cm2 and 54 kV/cm, respectively. No fatigue was observed up to 1010 switching cycles. Switching current versus voltage (I-V) characteristic showed two peaks near the coercive field and a static dielectric constant of 400 at zero applied voltage.

AB - Ferroelectric SrBi2 TaNbO9 (SBTN) thin films were synthesized on the Si/SiO2/Ti/Pt substrates by pulsed laser deposition (PLD), and the ferroelectric properties of SBTN films were studied. The high diffraction peak of (115) was characterized by x-ray diffractometer (XRD). The film exhibits good ferroelectric properties; the remnant polarization and coercive field were about 14 μC/cm2 and 54 kV/cm, respectively. No fatigue was observed up to 1010 switching cycles. Switching current versus voltage (I-V) characteristic showed two peaks near the coercive field and a static dielectric constant of 400 at zero applied voltage.

UR - https://www.scopus.com/pages/publications/0032384736

M3 - 文章

AN - SCOPUS:0032384736

SN - 0374-4884

VL - 32

SP - S1383-S1385

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 4 SUPPL.

ER -

Pulsed laser deposition and characteristics of SrBi2 TaNbO9 thin films

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Pulsed laser deposition and characteristics of SrBi₂ TaNbO₉ thin films