摘要
Zinc oxide (ZnO) thin films were deposited on Si (100) by pulsed laser deposition (PLD). XRD, TEM and AFM exhibited the ZnO films were highly c-axis oriented with smooth surface. High resistivity (107 Ω·cm) of the films could be achieved by varying deposition ambient atmosphere or annealing in pure oxygen at high temperature. The results showed that the ZnO films deposited by PLD meet the demands for surface acoustic wave (SAW) devices.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 78-79+90 |
| 期刊 | Gongneng Cailiao/Journal of Functional Materials |
| 卷 | 32 |
| 期 | 1 |
| 出版状态 | 已出版 - 2月 2001 |
| 已对外发布 | 是 |
学术指纹
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