Pseudospin in Si δ-doped InAlAs/InGaAs/InAlAs single quantum well

W. Z. Zhou; Z. M. Huang; Z. J. Qiu; T. Lin; L. Y. Shang; D. L. Li; H. L. Gao; L. J. Cui; Y. P. Zeng; S. L. Guo; Y. S. Gui; N. Dai; J. H. Chu

doi:10.1016/j.ssc.2007.03.014

Pseudospin in Si δ-doped InAlAs/InGaAs/InAlAs single quantum well

W. Z. Zhou
, Z. M. Huang
, Z. J. Qiu
, T. Lin
, L. Y. Shang
, D. L. Li
, H. L. Gao
, L. J. Cui
, Y. P. Zeng
, S. L. Guo
, Y. S. Gui
, N. Dai
, J. H. Chu^*

^*此作品的通讯作者

物理与电子科学学院

CAS - Shanghai Institute of Technical Physics
Guangxi University
Fudan University
CAS - Institute of Semiconductors

科研成果: 期刊稿件 › 文章 › 同行评审

2 引用（Scopus）

摘要

Magneto-transport measurements have been carried out on double/single-barrier-doped In_0.52Al_0.48As/ In_0.53Ga_0.47As/ In_0.52Al_0.48As quantum well samples from 1.5 to 60 K in an applied magnetic field up to 13 T. Beating Shubnikov-de Haas oscillation is observed for the symmetrically double-barrier-doped sample and demonstrated due to a symmetric state and an antisymmetric state confined in two coupled self-consistent potential wells in the single quantum well. The energy separation between the symmetric and the antisymmetric states for the double-barrier-doped sample is extracted from experimental data, which is consistent with calculation. For the single-barrier-doped sample, only beating related to magneto-intersubband scattering shows up. The pesudospin property of the symmetrically double-barrier-doped single quantum well shows that it is a good candidate for fabricating quantum transistors.

源语言	英语
页（从-至）	393-397
页数	5
期刊	Solid State Communications
卷	142
期	7
DOI	https://doi.org/10.1016/j.ssc.2007.03.014
出版状态	已出版 - 5月 2007

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title = "Pseudospin in Si δ-doped InAlAs/InGaAs/InAlAs single quantum well",

abstract = "Magneto-transport measurements have been carried out on double/single-barrier-doped In0.52Al0.48As/ In0.53Ga0.47As/ In0.52Al0.48As quantum well samples from 1.5 to 60 K in an applied magnetic field up to 13 T. Beating Shubnikov-de Haas oscillation is observed for the symmetrically double-barrier-doped sample and demonstrated due to a symmetric state and an antisymmetric state confined in two coupled self-consistent potential wells in the single quantum well. The energy separation between the symmetric and the antisymmetric states for the double-barrier-doped sample is extracted from experimental data, which is consistent with calculation. For the single-barrier-doped sample, only beating related to magneto-intersubband scattering shows up. The pesudospin property of the symmetrically double-barrier-doped single quantum well shows that it is a good candidate for fabricating quantum transistors.",

keywords = "A. Quantum wells, D. Electronic transport, D. Tunnelling",

author = "Zhou, \{W. Z.\} and Huang, \{Z. M.\} and Qiu, \{Z. J.\} and T. Lin and Shang, \{L. Y.\} and Li, \{D. L.\} and Gao, \{H. L.\} and Cui, \{L. J.\} and Zeng, \{Y. P.\} and Guo, \{S. L.\} and Gui, \{Y. S.\} and N. Dai and Chu, \{J. H.\}",

year = "2007",

month = may,

doi = "10.1016/j.ssc.2007.03.014",

language = "英语",

volume = "142",

pages = "393--397",

journal = "Solid State Communications",

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number = "7",

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TY - JOUR

T1 - Pseudospin in Si δ-doped InAlAs/InGaAs/InAlAs single quantum well

AU - Zhou, W. Z.

AU - Huang, Z. M.

AU - Qiu, Z. J.

AU - Lin, T.

AU - Shang, L. Y.

AU - Li, D. L.

AU - Gao, H. L.

AU - Cui, L. J.

AU - Zeng, Y. P.

AU - Guo, S. L.

AU - Gui, Y. S.

AU - Dai, N.

AU - Chu, J. H.

PY - 2007/5

Y1 - 2007/5

N2 - Magneto-transport measurements have been carried out on double/single-barrier-doped In0.52Al0.48As/ In0.53Ga0.47As/ In0.52Al0.48As quantum well samples from 1.5 to 60 K in an applied magnetic field up to 13 T. Beating Shubnikov-de Haas oscillation is observed for the symmetrically double-barrier-doped sample and demonstrated due to a symmetric state and an antisymmetric state confined in two coupled self-consistent potential wells in the single quantum well. The energy separation between the symmetric and the antisymmetric states for the double-barrier-doped sample is extracted from experimental data, which is consistent with calculation. For the single-barrier-doped sample, only beating related to magneto-intersubband scattering shows up. The pesudospin property of the symmetrically double-barrier-doped single quantum well shows that it is a good candidate for fabricating quantum transistors.

AB - Magneto-transport measurements have been carried out on double/single-barrier-doped In0.52Al0.48As/ In0.53Ga0.47As/ In0.52Al0.48As quantum well samples from 1.5 to 60 K in an applied magnetic field up to 13 T. Beating Shubnikov-de Haas oscillation is observed for the symmetrically double-barrier-doped sample and demonstrated due to a symmetric state and an antisymmetric state confined in two coupled self-consistent potential wells in the single quantum well. The energy separation between the symmetric and the antisymmetric states for the double-barrier-doped sample is extracted from experimental data, which is consistent with calculation. For the single-barrier-doped sample, only beating related to magneto-intersubband scattering shows up. The pesudospin property of the symmetrically double-barrier-doped single quantum well shows that it is a good candidate for fabricating quantum transistors.

KW - A. Quantum wells

KW - D. Electronic transport

KW - D. Tunnelling

UR - https://www.scopus.com/pages/publications/34247181953

U2 - 10.1016/j.ssc.2007.03.014

DO - 10.1016/j.ssc.2007.03.014

M3 - 文章

AN - SCOPUS:34247181953

SN - 0038-1098

VL - 142

SP - 393

EP - 397

JO - Solid State Communications

JF - Solid State Communications

IS - 7

ER -

Pseudospin in Si δ-doped InAlAs/InGaAs/InAlAs single quantum well

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