Properties of VO2 thin film prepared with precursor VO(acac)2

Mei Pan; Hongmei Zhong; Shaowei Wang; Jie Liu; Zhifeng Li; Xiaoshuang Chen; Wei Lu

doi:10.1016/j.jcrysgro.2003.12.065

Properties of VO₂ thin film prepared with precursor VO(acac)₂

Mei Pan^*
, Hongmei Zhong
, Shaowei Wang
, Jie Liu
, Zhifeng Li
, Xiaoshuang Chen
, Wei Lu

^*此作品的通讯作者

CAS - Shanghai Institute of Technical Physics

科研成果: 期刊稿件 › 文章 › 同行评审

119 引用（Scopus）

摘要

Both pure and tungsten (W)- or chromium (Cr)-doped vanadium dioxide (VO₂) thin films have been deposited by the sol-gel method on Si substrate using VO(acac)₂ as a precursor. XRD, Raman and atomic force microscopy (AFM) measurements showed the high (1 1 0) orientation of the films. It was found that the temperature coefficient of resistivity (TCR) values of the films around room temperature could be adjusted by impurity doping. Compared with the un-doped VO₂ films, the W-doping leads to larger TCR values, while the Cr-doping leads to smaller ones. The TCR value is linearly dependent on the impurity at room temperature. The largest TCR value of 5.2/%K^-1 was obtained for 20/at% W-doped VO₂ film.

源语言	英语
页（从-至）	121-126
页数	6
期刊	Journal of Crystal Growth
卷	265
期	1-2
DOI	https://doi.org/10.1016/j.jcrysgro.2003.12.065
出版状态	已出版 - 15 4月 2004
已对外发布	是

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10.1016/j.jcrysgro.2003.12.065

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@article{19dc69c72b444ebea2102f91646e2c2b,

title = "Properties of VO2 thin film prepared with precursor VO(acac)2",

abstract = "Both pure and tungsten (W)- or chromium (Cr)-doped vanadium dioxide (VO2) thin films have been deposited by the sol-gel method on Si substrate using VO(acac)2 as a precursor. XRD, Raman and atomic force microscopy (AFM) measurements showed the high (1 1 0) orientation of the films. It was found that the temperature coefficient of resistivity (TCR) values of the films around room temperature could be adjusted by impurity doping. Compared with the un-doped VO2 films, the W-doping leads to larger TCR values, while the Cr-doping leads to smaller ones. The TCR value is linearly dependent on the impurity at room temperature. The largest TCR value of 5.2/\%K-1 was obtained for 20/at\% W-doped VO2 film.",

keywords = "A1. Temperature coefficient of resistivity, Al. Sol-gel, B1. Vanadium dioxide thin film",

author = "Mei Pan and Hongmei Zhong and Shaowei Wang and Jie Liu and Zhifeng Li and Xiaoshuang Chen and Wei Lu",

year = "2004",

month = apr,

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doi = "10.1016/j.jcrysgro.2003.12.065",

language = "英语",

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TY - JOUR

T1 - Properties of VO2 thin film prepared with precursor VO(acac)2

AU - Pan, Mei

AU - Zhong, Hongmei

AU - Wang, Shaowei

AU - Liu, Jie

AU - Li, Zhifeng

AU - Chen, Xiaoshuang

AU - Lu, Wei

PY - 2004/4/15

Y1 - 2004/4/15

N2 - Both pure and tungsten (W)- or chromium (Cr)-doped vanadium dioxide (VO2) thin films have been deposited by the sol-gel method on Si substrate using VO(acac)2 as a precursor. XRD, Raman and atomic force microscopy (AFM) measurements showed the high (1 1 0) orientation of the films. It was found that the temperature coefficient of resistivity (TCR) values of the films around room temperature could be adjusted by impurity doping. Compared with the un-doped VO2 films, the W-doping leads to larger TCR values, while the Cr-doping leads to smaller ones. The TCR value is linearly dependent on the impurity at room temperature. The largest TCR value of 5.2/%K-1 was obtained for 20/at% W-doped VO2 film.

AB - Both pure and tungsten (W)- or chromium (Cr)-doped vanadium dioxide (VO2) thin films have been deposited by the sol-gel method on Si substrate using VO(acac)2 as a precursor. XRD, Raman and atomic force microscopy (AFM) measurements showed the high (1 1 0) orientation of the films. It was found that the temperature coefficient of resistivity (TCR) values of the films around room temperature could be adjusted by impurity doping. Compared with the un-doped VO2 films, the W-doping leads to larger TCR values, while the Cr-doping leads to smaller ones. The TCR value is linearly dependent on the impurity at room temperature. The largest TCR value of 5.2/%K-1 was obtained for 20/at% W-doped VO2 film.

KW - A1. Temperature coefficient of resistivity

KW - Al. Sol-gel

KW - B1. Vanadium dioxide thin film

UR - https://www.scopus.com/pages/publications/1842579952

U2 - 10.1016/j.jcrysgro.2003.12.065

DO - 10.1016/j.jcrysgro.2003.12.065

M3 - 文章

AN - SCOPUS:1842579952

SN - 0022-0248

VL - 265

SP - 121

EP - 126

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-2

ER -

Properties of VO2 thin film prepared with precursor VO(acac)2

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Properties of VO₂ thin film prepared with precursor VO(acac)₂