Properties of Ti–Sb–Te doped with SbSe alloy for application in nonvolatile phase change memory

Lanlan Shen; Sannian Song; Zhitang Song; Le Li; Tianqi Guo; Yan Cheng; Liangcai Wu; Bo Liu; Songlin Feng

doi:10.1007/s10854-016-5608-9

Properties of Ti–Sb–Te doped with SbSe alloy for application in nonvolatile phase change memory

Lanlan Shen^*
, Sannian Song
, Zhitang Song
, Le Li
, Tianqi Guo
, Yan Cheng
, Liangcai Wu
, Bo Liu
, Songlin Feng

^*此作品的通讯作者

CAS - Shanghai Institute of Microsystem and Information Technology
University of Chinese Academy of Sciences

科研成果: 期刊稿件 › 文章 › 同行评审

5 引用（Scopus）

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Sb₂Se₃ alloy is used as a dopant for Ti–Sb–Te phase change material aiming to improve the thermal stability of Ti–Sb–Te based phase change memory cell. In this paper, the thermal and electrical properties of Sb₂Se₃-doped Ti_0.32Sb₂Te₃ are respectively investigated. Compared with Ti_0.32Sb₂Te₃ material, (Sb₂Se₃)_0.28(Ti_0.32Sb₂Te₃)_0.72 has better thermal stability with crystallization temperature of 203 °C and estimated 10-year data retention of 102 °C. For the (Sb₂Se₃)_0.28(Ti_0.32Sb₂Te₃)_0.72-based PCM cell, it inherits the advantage of fast switching speed and good endurance of TST based one with wider SET/RESET window. The effects of Sb₂Se₃ doping on the structure of Ti_0.32Sb₂Te₃ are also systemically studied. In crystalline (Sb₂Se₃)_0.28(Ti_0.32Sb₂Te₃)_0.72 film structure, Se is prone to substitute Te and bond with Sb and Te in the Sb₂Te₃ lattice structure which may decrease the crystal lattice constant.

源语言	英语
页（从-至）	923-927
页数	5
期刊	Journal of Materials Science: Materials in Electronics
卷	28
期	1
DOI	https://doi.org/10.1007/s10854-016-5608-9
出版状态	已出版 - 1 1月 2017
已对外发布	是

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@article{db248daa52a84ea0b99124ea5ccb83b0,

title = "Properties of Ti–Sb–Te doped with SbSe alloy for application in nonvolatile phase change memory",

abstract = "Sb2Se3 alloy is used as a dopant for Ti–Sb–Te phase change material aiming to improve the thermal stability of Ti–Sb–Te based phase change memory cell. In this paper, the thermal and electrical properties of Sb2Se3-doped Ti0.32Sb2Te3 are respectively investigated. Compared with Ti0.32Sb2Te3 material, (Sb2Se3)0.28(Ti0.32Sb2Te3)0.72 has better thermal stability with crystallization temperature of 203 °C and estimated 10-year data retention of 102 °C. For the (Sb2Se3)0.28(Ti0.32Sb2Te3)0.72-based PCM cell, it inherits the advantage of fast switching speed and good endurance of TST based one with wider SET/RESET window. The effects of Sb2Se3 doping on the structure of Ti0.32Sb2Te3 are also systemically studied. In crystalline (Sb2Se3)0.28(Ti0.32Sb2Te3)0.72 film structure, Se is prone to substitute Te and bond with Sb and Te in the Sb2Te3 lattice structure which may decrease the crystal lattice constant.",

author = "Lanlan Shen and Sannian Song and Zhitang Song and Le Li and Tianqi Guo and Yan Cheng and Liangcai Wu and Bo Liu and Songlin Feng",

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T1 - Properties of Ti–Sb–Te doped with SbSe alloy for application in nonvolatile phase change memory

AU - Shen, Lanlan

AU - Song, Sannian

AU - Song, Zhitang

AU - Li, Le

AU - Guo, Tianqi

AU - Cheng, Yan

AU - Wu, Liangcai

AU - Liu, Bo

AU - Feng, Songlin

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Sb2Se3 alloy is used as a dopant for Ti–Sb–Te phase change material aiming to improve the thermal stability of Ti–Sb–Te based phase change memory cell. In this paper, the thermal and electrical properties of Sb2Se3-doped Ti0.32Sb2Te3 are respectively investigated. Compared with Ti0.32Sb2Te3 material, (Sb2Se3)0.28(Ti0.32Sb2Te3)0.72 has better thermal stability with crystallization temperature of 203 °C and estimated 10-year data retention of 102 °C. For the (Sb2Se3)0.28(Ti0.32Sb2Te3)0.72-based PCM cell, it inherits the advantage of fast switching speed and good endurance of TST based one with wider SET/RESET window. The effects of Sb2Se3 doping on the structure of Ti0.32Sb2Te3 are also systemically studied. In crystalline (Sb2Se3)0.28(Ti0.32Sb2Te3)0.72 film structure, Se is prone to substitute Te and bond with Sb and Te in the Sb2Te3 lattice structure which may decrease the crystal lattice constant.

AB - Sb2Se3 alloy is used as a dopant for Ti–Sb–Te phase change material aiming to improve the thermal stability of Ti–Sb–Te based phase change memory cell. In this paper, the thermal and electrical properties of Sb2Se3-doped Ti0.32Sb2Te3 are respectively investigated. Compared with Ti0.32Sb2Te3 material, (Sb2Se3)0.28(Ti0.32Sb2Te3)0.72 has better thermal stability with crystallization temperature of 203 °C and estimated 10-year data retention of 102 °C. For the (Sb2Se3)0.28(Ti0.32Sb2Te3)0.72-based PCM cell, it inherits the advantage of fast switching speed and good endurance of TST based one with wider SET/RESET window. The effects of Sb2Se3 doping on the structure of Ti0.32Sb2Te3 are also systemically studied. In crystalline (Sb2Se3)0.28(Ti0.32Sb2Te3)0.72 film structure, Se is prone to substitute Te and bond with Sb and Te in the Sb2Te3 lattice structure which may decrease the crystal lattice constant.

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Properties of Ti–Sb–Te doped with SbSe alloy for application in nonvolatile phase change memory

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