摘要
The 70%Pb (Mg13, Nb23) O3 -30%PbTi O3 (PMNT) films have been fabricated on LaNi O3 (LNO) coated silicon substrate. The conductive LNO films act as a seed layer for the growth of PMNT films, which depresses the formation of pyrochlore phase and induces the high (100) preferred orientation of perovskite PMNT films. Compared with the PMNT films grown on platinum bottom electrode, the ferroelectric properties of PMNT films grown on LNO are enhanced. The frequency dependence of complex permittivity from PMNT films on LNO is the conjunct result of polarization relaxation and movement of oxygen vacancy, which can be fitted by the function containing Debye and universal dielectric response models, respectively.
| 源语言 | 英语 |
|---|---|
| 文章编号 | 232912 |
| 期刊 | Applied Physics Letters |
| 卷 | 91 |
| 期 | 23 |
| DOI | |
| 出版状态 | 已出版 - 2007 |
学术指纹
探究 'Properties of highly (100) oriented Pb (Mg1/3,Nb 2/3)O3-PbTiO3 films on LaNiO3 bottom electrodes' 的科研主题。它们共同构成独一无二的学术指纹。引用此
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