Processing parameters and property of AZO thin film prepared by magnetron sputtering

As we all know, transparent and conductive Al:ZnO (AZO) films are being considered for manufacturing transparent electrodes in flat panel displays, solar cells and organic light emitting diodes due to their high electro optical quality, high material availability and low material cost for large area applications. In this experiment, AZO thin films were prepared on glass substrate by Magnetron Sputtering method with a 2wt % Al -doped ceramic target .The processing parameters on electrical properties of AZO thin film were investigated. When processing pressure is 0.8Pa,the sputtering power is 225W,the temperature of substrate is 225°, the AZO thin films have a lowest resistivity of 9.81×10^-4 Ω.cm and visible light transmittance of more than 85%.