Preparation of highly (1 0 0)-oriented LaNiO3 nanocrystalline films by metalorganic chemical liquid deposition

G. S. Wang; Q. Zhao; X. J. Meng; J. H. Chu; D. Rémiens

doi:10.1016/j.jcrysgro.2005.01.099

Preparation of highly (1 0 0)-oriented LaNiO₃ nanocrystalline films by metalorganic chemical liquid deposition

G. S. Wang^*
, Q. Zhao
, X. J. Meng
, J. H. Chu
, D. Rémiens

^*此作品的通讯作者

CAS - Shanghai Institute of Technical Physics
Cité Scientifique

科研成果: 期刊稿件 › 文章 › 同行评审

45 引用（Scopus）

摘要

Lanthanum nickelate LaNiO₃ (LNO) nanocrystalline films have been grown by the metalorganic chemical liquid deposition (MOCLD) technique using lanthanum acetate and nickel acetate as the starting materials. The technique simplified the process of preparation for LNO thin films by chemical solution routes. XRD measurements showed that the LNO films deposited on Si, SiO ₂/Si and Pt/Ti/SiO₂/Si substrates exhibit preferential (1 0 0) orientation. The effects of pyrolysis temperature and thickness on (1 0 0)-orientation parameters of LNO films were investigated. The lowest resistivity film was obtained by annealing at 750 °C. The effects of thickness and annealing temperature on resistivity of the LNO films have been discussed. PbZr_0.4Ti_0.6O₃ (PZT) films deposited onto LNO films displayed a good P-E hysteresis characteristic and fatigue free to 10 ⁸ fatigue cycles.

源语言	英语
页（从-至）	450-456
页数	7
期刊	Journal of Crystal Growth
卷	277
期	1-4
DOI	https://doi.org/10.1016/j.jcrysgro.2005.01.099
出版状态	已出版 - 15 4月 2005
已对外发布	是

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10.1016/j.jcrysgro.2005.01.099

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@article{a6c1c42c04fd4d6d9642814cf43d7b0f,

title = "Preparation of highly (1 0 0)-oriented LaNiO3 nanocrystalline films by metalorganic chemical liquid deposition",

abstract = "Lanthanum nickelate LaNiO3 (LNO) nanocrystalline films have been grown by the metalorganic chemical liquid deposition (MOCLD) technique using lanthanum acetate and nickel acetate as the starting materials. The technique simplified the process of preparation for LNO thin films by chemical solution routes. XRD measurements showed that the LNO films deposited on Si, SiO 2/Si and Pt/Ti/SiO2/Si substrates exhibit preferential (1 0 0) orientation. The effects of pyrolysis temperature and thickness on (1 0 0)-orientation parameters of LNO films were investigated. The lowest resistivity film was obtained by annealing at 750 °C. The effects of thickness and annealing temperature on resistivity of the LNO films have been discussed. PbZr0.4Ti0.6O3 (PZT) films deposited onto LNO films displayed a good P-E hysteresis characteristic and fatigue free to 10 8 fatigue cycles.",

keywords = "A1. X-ray diffraction, B1. Perovskite, B2. Oxide superconducting materials",

author = "Wang, \{G. S.\} and Q. Zhao and Meng, \{X. J.\} and Chu, \{J. H.\} and D. R{\'e}miens",

year = "2005",

month = apr,

day = "15",

doi = "10.1016/j.jcrysgro.2005.01.099",

language = "英语",

volume = "277",

pages = "450--456",

journal = "Journal of Crystal Growth",

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publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Preparation of highly (1 0 0)-oriented LaNiO3 nanocrystalline films by metalorganic chemical liquid deposition

AU - Wang, G. S.

AU - Zhao, Q.

AU - Meng, X. J.

AU - Chu, J. H.

AU - Rémiens, D.

PY - 2005/4/15

Y1 - 2005/4/15

N2 - Lanthanum nickelate LaNiO3 (LNO) nanocrystalline films have been grown by the metalorganic chemical liquid deposition (MOCLD) technique using lanthanum acetate and nickel acetate as the starting materials. The technique simplified the process of preparation for LNO thin films by chemical solution routes. XRD measurements showed that the LNO films deposited on Si, SiO 2/Si and Pt/Ti/SiO2/Si substrates exhibit preferential (1 0 0) orientation. The effects of pyrolysis temperature and thickness on (1 0 0)-orientation parameters of LNO films were investigated. The lowest resistivity film was obtained by annealing at 750 °C. The effects of thickness and annealing temperature on resistivity of the LNO films have been discussed. PbZr0.4Ti0.6O3 (PZT) films deposited onto LNO films displayed a good P-E hysteresis characteristic and fatigue free to 10 8 fatigue cycles.

AB - Lanthanum nickelate LaNiO3 (LNO) nanocrystalline films have been grown by the metalorganic chemical liquid deposition (MOCLD) technique using lanthanum acetate and nickel acetate as the starting materials. The technique simplified the process of preparation for LNO thin films by chemical solution routes. XRD measurements showed that the LNO films deposited on Si, SiO 2/Si and Pt/Ti/SiO2/Si substrates exhibit preferential (1 0 0) orientation. The effects of pyrolysis temperature and thickness on (1 0 0)-orientation parameters of LNO films were investigated. The lowest resistivity film was obtained by annealing at 750 °C. The effects of thickness and annealing temperature on resistivity of the LNO films have been discussed. PbZr0.4Ti0.6O3 (PZT) films deposited onto LNO films displayed a good P-E hysteresis characteristic and fatigue free to 10 8 fatigue cycles.

KW - A1. X-ray diffraction

KW - B1. Perovskite

KW - B2. Oxide superconducting materials

UR - https://www.scopus.com/pages/publications/15844373350

U2 - 10.1016/j.jcrysgro.2005.01.099

DO - 10.1016/j.jcrysgro.2005.01.099

M3 - 文章

AN - SCOPUS:15844373350

SN - 0022-0248

VL - 277

SP - 450

EP - 456

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Preparation of highly (1 0 0)-oriented LaNiO3 nanocrystalline films by metalorganic chemical liquid deposition

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Preparation of highly (1 0 0)-oriented LaNiO₃ nanocrystalline films by metalorganic chemical liquid deposition