TY - GEN
T1 - Preparation and properties of ZnO:Mo thin films deposited by RF magnetron sputtering
AU - Ma, Jianhua
AU - Liang, Yan
AU - Zhu, Xiaojing
AU - Jiang, Jinchun
AU - Wang, Shanli
AU - Yao, Niangjuan
AU - Chu, Junhao
PY - 2011
Y1 - 2011
N2 - Mo doped ZnO thin films (ZnO:Mo, MZO) were prepared on quartz glass substrates by RF magnetron sputtering at the lower substrate temperatures (room temperature (RT) and 100 °C). Their structural, electrical and optical properties were studied by X-ray diffractometry (XRD), four probe technique, Hall measurement, and UV-VIS-NIR spectrophotometer, respectively. XRD showed that the resultant films were wurtzite structure with c-axis preferential orientation. As the substrate temperatures increasing, the thickness of the film increased and the crystallinity became better. The resistivity of the films were 3.44×10-3 Ω•cm and 3.31×10-3 Ω•cm for the films deposited at RT and 100 °C, respectively. The corresponding average transmittance in visible and near IR region (400-1100nm) was 81.7 % and 74.5 %, respectively. In addition, for the film deposited at 100 °C, the refractive index (n) and band gap (Eg) were obtained by fitting the transmittance spectra and discussed.
AB - Mo doped ZnO thin films (ZnO:Mo, MZO) were prepared on quartz glass substrates by RF magnetron sputtering at the lower substrate temperatures (room temperature (RT) and 100 °C). Their structural, electrical and optical properties were studied by X-ray diffractometry (XRD), four probe technique, Hall measurement, and UV-VIS-NIR spectrophotometer, respectively. XRD showed that the resultant films were wurtzite structure with c-axis preferential orientation. As the substrate temperatures increasing, the thickness of the film increased and the crystallinity became better. The resistivity of the films were 3.44×10-3 Ω•cm and 3.31×10-3 Ω•cm for the films deposited at RT and 100 °C, respectively. The corresponding average transmittance in visible and near IR region (400-1100nm) was 81.7 % and 74.5 %, respectively. In addition, for the film deposited at 100 °C, the refractive index (n) and band gap (Eg) were obtained by fitting the transmittance spectra and discussed.
KW - Electrical and optical properties
KW - Magnetron sputtering
KW - ZnO:Mo (MZO) thin film
UR - https://www.scopus.com/pages/publications/79953031077
U2 - 10.1117/12.888246
DO - 10.1117/12.888246
M3 - 会议稿件
AN - SCOPUS:79953031077
SN - 9780819485687
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Seventh International Conference on Thin Film Physics and Applications
T2 - 7th International Conference on Thin Film Physics and Applications
Y2 - 24 September 2010 through 27 September 2010
ER -