Preparation and properties of lanthanum strontium cobalt films on Si(1 0 0) by metallorganic chemical liquid deposition

G. S. Wang; Z. Q. Lai; J. Yu; S. L. Guo; J. H. Chu; G. Li; Q. H. Lu

doi:10.1016/S0022-0248(01)01603-7

Preparation and properties of lanthanum strontium cobalt films on Si(1 0 0) by metallorganic chemical liquid deposition

G. S. Wang^*
, Z. Q. Lai
, J. Yu
, S. L. Guo
, J. H. Chu
, G. Li
, Q. H. Lu

^*此作品的通讯作者

CAS - Shanghai Institute of Technical Physics
Shanghai Jiao Tong University

科研成果: 期刊稿件 › 文章 › 同行评审

12 引用（Scopus）

摘要

Lanthanum strontium cobalt La_0.5Sr_0.5CoO₃ (LSCO) films have been grown on Si(1 0 0) substrate by metallorganic chemical liquid deposition (MOCLD) technique using lanthanum acetate, strontium acetate and cobalt acetate as the starting materials. The technique simplified the preparation of LSCO thin films by chemical solution routes. The films were crystallized by rapid thermal annealing (RTA) process. The films annealed between 600°C and 750°C are entirely in the perovskite phase and show good conductivity. The lowest resistivity (950 μΩ cm) thin films were obtained by annealing at 750°C. The size effect of sheet resistance of the LSCO films has been discussed. PbZr_0.5Ti_0.5O₃ (PZT) films deposited onto LSCO films displayed a good P-E hysteresis characteristic.

源语言	英语
页（从-至）	512-516
页数	5
期刊	Journal of Crystal Growth
卷	233
期	3
DOI	https://doi.org/10.1016/S0022-0248(01)01603-7
出版状态	已出版 - 12月 2001
已对外发布	是

访问文件

10.1016/S0022-0248(01)01603-7

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{927037272435426fa4985c111bb3ff6c,

title = "Preparation and properties of lanthanum strontium cobalt films on Si(1 0 0) by metallorganic chemical liquid deposition",

abstract = "Lanthanum strontium cobalt La0.5Sr0.5CoO3 (LSCO) films have been grown on Si(1 0 0) substrate by metallorganic chemical liquid deposition (MOCLD) technique using lanthanum acetate, strontium acetate and cobalt acetate as the starting materials. The technique simplified the preparation of LSCO thin films by chemical solution routes. The films were crystallized by rapid thermal annealing (RTA) process. The films annealed between 600°C and 750°C are entirely in the perovskite phase and show good conductivity. The lowest resistivity (950 μΩ cm) thin films were obtained by annealing at 750°C. The size effect of sheet resistance of the LSCO films has been discussed. PbZr0.5Ti0.5O3 (PZT) films deposited onto LSCO films displayed a good P-E hysteresis characteristic.",

keywords = "A1. X-ray diffraction, B1. perovskites, B2. oxide superconducting materials",

author = "Wang, \{G. S.\} and Lai, \{Z. Q.\} and J. Yu and Guo, \{S. L.\} and Chu, \{J. H.\} and G. Li and Lu, \{Q. H.\}",

year = "2001",

month = dec,

doi = "10.1016/S0022-0248(01)01603-7",

language = "英语",

volume = "233",

pages = "512--516",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "3",

}

TY - JOUR

T1 - Preparation and properties of lanthanum strontium cobalt films on Si(1 0 0) by metallorganic chemical liquid deposition

AU - Wang, G. S.

AU - Lai, Z. Q.

AU - Yu, J.

AU - Guo, S. L.

AU - Chu, J. H.

AU - Li, G.

AU - Lu, Q. H.

PY - 2001/12

Y1 - 2001/12

N2 - Lanthanum strontium cobalt La0.5Sr0.5CoO3 (LSCO) films have been grown on Si(1 0 0) substrate by metallorganic chemical liquid deposition (MOCLD) technique using lanthanum acetate, strontium acetate and cobalt acetate as the starting materials. The technique simplified the preparation of LSCO thin films by chemical solution routes. The films were crystallized by rapid thermal annealing (RTA) process. The films annealed between 600°C and 750°C are entirely in the perovskite phase and show good conductivity. The lowest resistivity (950 μΩ cm) thin films were obtained by annealing at 750°C. The size effect of sheet resistance of the LSCO films has been discussed. PbZr0.5Ti0.5O3 (PZT) films deposited onto LSCO films displayed a good P-E hysteresis characteristic.

AB - Lanthanum strontium cobalt La0.5Sr0.5CoO3 (LSCO) films have been grown on Si(1 0 0) substrate by metallorganic chemical liquid deposition (MOCLD) technique using lanthanum acetate, strontium acetate and cobalt acetate as the starting materials. The technique simplified the preparation of LSCO thin films by chemical solution routes. The films were crystallized by rapid thermal annealing (RTA) process. The films annealed between 600°C and 750°C are entirely in the perovskite phase and show good conductivity. The lowest resistivity (950 μΩ cm) thin films were obtained by annealing at 750°C. The size effect of sheet resistance of the LSCO films has been discussed. PbZr0.5Ti0.5O3 (PZT) films deposited onto LSCO films displayed a good P-E hysteresis characteristic.

KW - A1. X-ray diffraction

KW - B1. perovskites

KW - B2. oxide superconducting materials

UR - https://www.scopus.com/pages/publications/0035546584

U2 - 10.1016/S0022-0248(01)01603-7

DO - 10.1016/S0022-0248(01)01603-7

M3 - 文章

AN - SCOPUS:0035546584

SN - 0022-0248

VL - 233

SP - 512

EP - 516

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3

ER -

Preparation and properties of lanthanum strontium cobalt films on Si(1 0 0) by metallorganic chemical liquid deposition

摘要

访问文件

其它文件与链接

学术指纹

引用此