Preparation and properties of CaCu3Ti4O12 thin film grown on LaNiO3-coated silicon by sol-gel process

Y. W. Li; Z. G. Hu; J. L. Sun; X. J. Meng; J. H. Chu

doi:10.1016/j.jcrysgro.2007.11.025

Preparation and properties of CaCu₃Ti₄O₁₂ thin film grown on LaNiO₃-coated silicon by sol-gel process

Y. W. Li^*
, Z. G. Hu
, J. L. Sun
, X. J. Meng
, J. H. Chu

^*此作品的通讯作者

物理与电子科学学院

East China Normal University
CAS - Shanghai Institute of Technical Physics

科研成果: 期刊稿件 › 文章 › 同行评审

14 引用（Scopus）

摘要

CaCu₃Ti₄O₁₂ (CCTO) thin film was prepared on LaNiO₃ (LNO)-coated silicon substrate by a sol-gel process. The CCTO sample is perovskite structure without any detectable impurities. Compared with the films grown on platinum (Pt), the CCTO thin film on LNO exhibits the (4 0 0) preferential orientation. It may be due to the LNO acts as seed layer during the growth of the CCTO film. It is indicated that the dielectric loss of CCTO thin film on LNO is lower than that of the films on Pt. The dielectric response of CCTO thin film on LNO can be described with the Debye relaxation model subjoining the contribution of conductance and diffusion effect.

源语言	英语
页（从-至）	378-381
页数	4
期刊	Journal of Crystal Growth
卷	310
期	2
DOI	https://doi.org/10.1016/j.jcrysgro.2007.11.025
出版状态	已出版 - 15 1月 2008

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10.1016/j.jcrysgro.2007.11.025

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@article{8a591592c519424b9d3c7e72af755ae4,

title = "Preparation and properties of CaCu3Ti4O12 thin film grown on LaNiO3-coated silicon by sol-gel process",

abstract = "CaCu3Ti4O12 (CCTO) thin film was prepared on LaNiO3 (LNO)-coated silicon substrate by a sol-gel process. The CCTO sample is perovskite structure without any detectable impurities. Compared with the films grown on platinum (Pt), the CCTO thin film on LNO exhibits the (4 0 0) preferential orientation. It may be due to the LNO acts as seed layer during the growth of the CCTO film. It is indicated that the dielectric loss of CCTO thin film on LNO is lower than that of the films on Pt. The dielectric response of CCTO thin film on LNO can be described with the Debye relaxation model subjoining the contribution of conductance and diffusion effect.",

keywords = "A3. Polycrystalline deposition, B1. Perovskites, B1. Titanium compounds, B2. Dielectric materials",

author = "Li, \{Y. W.\} and Hu, \{Z. G.\} and Sun, \{J. L.\} and Meng, \{X. J.\} and Chu, \{J. H.\}",

year = "2008",

month = jan,

day = "15",

doi = "10.1016/j.jcrysgro.2007.11.025",

language = "英语",

volume = "310",

pages = "378--381",

journal = "Journal of Crystal Growth",

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publisher = "Elsevier B.V.",

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}

TY - JOUR

T1 - Preparation and properties of CaCu3Ti4O12 thin film grown on LaNiO3-coated silicon by sol-gel process

AU - Li, Y. W.

AU - Hu, Z. G.

AU - Sun, J. L.

AU - Meng, X. J.

AU - Chu, J. H.

PY - 2008/1/15

Y1 - 2008/1/15

N2 - CaCu3Ti4O12 (CCTO) thin film was prepared on LaNiO3 (LNO)-coated silicon substrate by a sol-gel process. The CCTO sample is perovskite structure without any detectable impurities. Compared with the films grown on platinum (Pt), the CCTO thin film on LNO exhibits the (4 0 0) preferential orientation. It may be due to the LNO acts as seed layer during the growth of the CCTO film. It is indicated that the dielectric loss of CCTO thin film on LNO is lower than that of the films on Pt. The dielectric response of CCTO thin film on LNO can be described with the Debye relaxation model subjoining the contribution of conductance and diffusion effect.

AB - CaCu3Ti4O12 (CCTO) thin film was prepared on LaNiO3 (LNO)-coated silicon substrate by a sol-gel process. The CCTO sample is perovskite structure without any detectable impurities. Compared with the films grown on platinum (Pt), the CCTO thin film on LNO exhibits the (4 0 0) preferential orientation. It may be due to the LNO acts as seed layer during the growth of the CCTO film. It is indicated that the dielectric loss of CCTO thin film on LNO is lower than that of the films on Pt. The dielectric response of CCTO thin film on LNO can be described with the Debye relaxation model subjoining the contribution of conductance and diffusion effect.

KW - A3. Polycrystalline deposition

KW - B1. Perovskites

KW - B1. Titanium compounds

KW - B2. Dielectric materials

UR - https://www.scopus.com/pages/publications/37549006042

U2 - 10.1016/j.jcrysgro.2007.11.025

DO - 10.1016/j.jcrysgro.2007.11.025

M3 - 文章

AN - SCOPUS:37549006042

SN - 0022-0248

VL - 310

SP - 378

EP - 381

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2

ER -

Preparation and properties of CaCu3Ti4O12 thin film grown on LaNiO3-coated silicon by sol-gel process

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Preparation and properties of CaCu₃Ti₄O₁₂ thin film grown on LaNiO₃-coated silicon by sol-gel process