Preparation and properties of Bi₂Ti₂O₇ thin films by chemical solution deposition

Homogeneous and crack-free Bi₂Ti₂O₇ thin films with strong (111) orientation were successfully prepared on n-type Si (100) substrates by chemical solution deposition. Bismuth nitrate and titanium butoxide were used as starting materials. The crystallization temperature is relatively low and about 500°C. The insulating and dielectric properties were found to be dependent on the annealing temperature. The dielectric constant was 115.5 at 100 kHz at room temperature, and the leakage current density was 3.48 × 10^-7 A/cm² at an applied voltage of 15 V (375 kV/cm) for 0.4 μm-thick films annealed at 500°C for 30 min.