Preparation and characterization of room-temperature ferromagnetism GaMnN based on ion implantation

Jiqing Wang; Pingping Chen; Zhifeng Li; Xuguang Guo; H. Makino; T. Yao; Hong Chen; Qi Huang; Junming Zhou; Wei Lu

doi:10.1360/02yw0192

Preparation and characterization of room-temperature ferromagnetism GaMnN based on ion implantation

Jiqing Wang^*
, Pingping Chen
, Zhifeng Li
, Xuguang Guo
, H. Makino
, T. Yao
, Hong Chen
, Qi Huang
, Junming Zhou
, Wei Lu

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

2 引用（Scopus）

摘要

This paper reports the fabrication of GaMnN ferromagnetic semiconductor on GaN substrate by high-dose Mn ion implantation. Both the structural and optical properties for Mn⁺-implanted GaN material were studied by X-ray diffraction, Raman scattering and photoluminescence. The results reveal that the implanted manganese incorporates on Ga site and GaMnN ternary phase is formed in the substrate. The magnetic behavior has been characterized by superconducting quantum interference device. The material shows room-temperature ferromagnetism. The temperature-dependent magnetization indicates different mechanism for ferromagnetism in Mn⁺-implanted GaN.

源语言	英语
页（从-至）	474
页数	1
期刊	Science in China, Series G: Physics Astronomy
卷	46
期	5
DOI	https://doi.org/10.1360/02yw0192
出版状态	已出版 - 10月 2003
已对外发布	是

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@article{288c9771d7f846209d5d9829ef708077,

title = "Preparation and characterization of room-temperature ferromagnetism GaMnN based on ion implantation",

abstract = "This paper reports the fabrication of GaMnN ferromagnetic semiconductor on GaN substrate by high-dose Mn ion implantation. Both the structural and optical properties for Mn+-implanted GaN material were studied by X-ray diffraction, Raman scattering and photoluminescence. The results reveal that the implanted manganese incorporates on Ga site and GaMnN ternary phase is formed in the substrate. The magnetic behavior has been characterized by superconducting quantum interference device. The material shows room-temperature ferromagnetism. The temperature-dependent magnetization indicates different mechanism for ferromagnetism in Mn+-implanted GaN.",

keywords = "Curie temperature, Diluted magnetic semiconductor, SQUID",

author = "Jiqing Wang and Pingping Chen and Zhifeng Li and Xuguang Guo and H. Makino and T. Yao and Hong Chen and Qi Huang and Junming Zhou and Wei Lu",

year = "2003",

month = oct,

doi = "10.1360/02yw0192",

language = "英语",

volume = "46",

pages = "474",

journal = "Science in China, Series G: Physics Astronomy",

issn = "1672-1799",

publisher = "Science China Press ",

number = "5",

}

TY - JOUR

T1 - Preparation and characterization of room-temperature ferromagnetism GaMnN based on ion implantation

AU - Wang, Jiqing

AU - Chen, Pingping

AU - Li, Zhifeng

AU - Guo, Xuguang

AU - Makino, H.

AU - Yao, T.

AU - Chen, Hong

AU - Huang, Qi

AU - Zhou, Junming

AU - Lu, Wei

PY - 2003/10

Y1 - 2003/10

N2 - This paper reports the fabrication of GaMnN ferromagnetic semiconductor on GaN substrate by high-dose Mn ion implantation. Both the structural and optical properties for Mn+-implanted GaN material were studied by X-ray diffraction, Raman scattering and photoluminescence. The results reveal that the implanted manganese incorporates on Ga site and GaMnN ternary phase is formed in the substrate. The magnetic behavior has been characterized by superconducting quantum interference device. The material shows room-temperature ferromagnetism. The temperature-dependent magnetization indicates different mechanism for ferromagnetism in Mn+-implanted GaN.

AB - This paper reports the fabrication of GaMnN ferromagnetic semiconductor on GaN substrate by high-dose Mn ion implantation. Both the structural and optical properties for Mn+-implanted GaN material were studied by X-ray diffraction, Raman scattering and photoluminescence. The results reveal that the implanted manganese incorporates on Ga site and GaMnN ternary phase is formed in the substrate. The magnetic behavior has been characterized by superconducting quantum interference device. The material shows room-temperature ferromagnetism. The temperature-dependent magnetization indicates different mechanism for ferromagnetism in Mn+-implanted GaN.

KW - Curie temperature

KW - Diluted magnetic semiconductor

KW - SQUID

UR - https://www.scopus.com/pages/publications/33751257184

U2 - 10.1360/02yw0192

DO - 10.1360/02yw0192

M3 - 文章

AN - SCOPUS:33751257184

SN - 1672-1799

VL - 46

SP - 474

JO - Science in China, Series G: Physics Astronomy

JF - Science in China, Series G: Physics Astronomy

IS - 5

ER -

Preparation and characterization of room-temperature ferromagnetism GaMnN based on ion implantation

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