Preparation and characterization of Pt/MgO/Si multilayer thin films

High-quality multilayer thin films of Pt(1 1 1)/MgO(1 0 0)/Si have been prepared for the first time, Single (1 0 0) oriented MgO thin films were successfully deposited by atmospheric pressure metalorganic chemical vapor deposition, and Pt thin films were fabricated by DC sputtering. The relationships between the annealing conditions and the crystallinity as well as the orientations have been studied by X-ray diffraction. The highly preferred (1 1 1) oriented Pt thin films have been obtained after annealing at 500°C for 60 min. The surface and interface diffusion of the Pt/MgO/Si multilayer thin films were also investigated using scanning electron microscopy and Auger electron spectroscopy. No remarkable interdiffusion at both interfaces of the Pt/MgO/Si multilayer thin films was found.