Post-treating techniques of porous silicon thin film

Ziqiang Zhu; Yongfu Long; Shaoqiang Chen; Xianwen Yu; Jianzhong Zhu

doi:10.1117/12.608166

Post-treating techniques of porous silicon thin film

Ziqiang Zhu^*
, Yongfu Long
, Shaoqiang Chen
, Xianwen Yu
, Jianzhong Zhu

^*此作品的通讯作者

通信与电子工程学院

East China Normal University

科研成果: 期刊稿件 › 会议文章 › 同行评审

摘要

An effective and simple novel technique for post-treating of PS films has been developed. The post treatment technique can avoid the cracking of PS films and enhance the stability, the surface smoothness and the mechanical intensity of the PS films, resulting in the expansion of application of the PS films.

源语言	英语
文章编号	102
页（从-至）	438-441
页数	4
期刊	Proceedings of SPIE - The International Society for Optical Engineering
卷	5774
DOI	https://doi.org/10.1117/12.608166
出版状态	已出版 - 2005
活动	Fifth International Conference on Thin Film Physics and Applications - Shanghai, 中国期限: 31 5月 2004 → 2 6月 2004

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title = "Post-treating techniques of porous silicon thin film",

abstract = "An effective and simple novel technique for post-treating of PS films has been developed. The post treatment technique can avoid the cracking of PS films and enhance the stability, the surface smoothness and the mechanical intensity of the PS films, resulting in the expansion of application of the PS films.",

keywords = "Anodization, Cathode reduction, Porous silicon, Post-treatment",

author = "Ziqiang Zhu and Yongfu Long and Shaoqiang Chen and Xianwen Yu and Jianzhong Zhu",

year = "2005",

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language = "英语",

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note = "Fifth International Conference on Thin Film Physics and Applications ; Conference date: 31-05-2004 Through 02-06-2004",

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T1 - Post-treating techniques of porous silicon thin film

AU - Zhu, Ziqiang

AU - Long, Yongfu

AU - Chen, Shaoqiang

AU - Yu, Xianwen

AU - Zhu, Jianzhong

PY - 2005

Y1 - 2005

N2 - An effective and simple novel technique for post-treating of PS films has been developed. The post treatment technique can avoid the cracking of PS films and enhance the stability, the surface smoothness and the mechanical intensity of the PS films, resulting in the expansion of application of the PS films.

AB - An effective and simple novel technique for post-treating of PS films has been developed. The post treatment technique can avoid the cracking of PS films and enhance the stability, the surface smoothness and the mechanical intensity of the PS films, resulting in the expansion of application of the PS films.

KW - Anodization

KW - Cathode reduction

KW - Porous silicon

KW - Post-treatment

UR - https://www.scopus.com/pages/publications/25644451370

U2 - 10.1117/12.608166

DO - 10.1117/12.608166

M3 - 会议文章

AN - SCOPUS:25644451370

SN - 0277-786X

VL - 5774

SP - 438

EP - 441

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 102

T2 - Fifth International Conference on Thin Film Physics and Applications

Y2 - 31 May 2004 through 2 June 2004

ER -

Post-treating techniques of porous silicon thin film

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