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Positive magnetoresistance in In0.53Ga0.47As/ In0.52Al0.48As quantum weir

  • Li Yan Shang*
  • , Tie Lin
  • , Wen Zheng Zhou
  • , Dong Lin Li
  • , Hong Ling Gao
  • , Yi Ping Zeng
  • , Shao Ling Guo
  • , Guo Lin Yu
  • , Jun Hao Chu
  • *此作品的通讯作者
  • CAS - Shanghai Institute of Technical Physics
  • Guangxi University
  • CAS - Institute of Semiconductors

科研成果: 期刊稿件文章同行评审

摘要

Magnetotransport measurements have been carried out on In0.53Ga0.47As/ In0.52Al0.48As quantum wells in a temperature range between 1.5 and 77 K. We have observed a large positive magnetoresistance in the low magnetic field range, but saturating in high magnetic fields. The magnetoresistance results from two occupied subbands in the two-dimensional electron gas. With the intersubband scattering considered, we obtained the subband mobility by analyzing the positive magnetoresistance. It is found that the second subband mobility is larger than that of the first due to the existence of the intersubband scattering.

源语言英语
页(从-至)5232-5236
页数5
期刊Wuli Xuebao/Acta Physica Sinica
57
8
出版状态已出版 - 8月 2008
已对外发布

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