@inproceedings{14edc82137a947c9888dedf73cd9af0a,
title = "Polar Axis Orientation Control of Hafnium-Based Ferroelectric Capacitors with in-Situ AC Electric Bias during Rapid Thermal Annealing",
abstract = "Hafnium-based ferroelectric (FE) thin films, prepared via atomic layer deposition (ALD), suffered from random oriented polar axis (PA), posing challenges and complexities for device scaling and variation. To effectively control the PA orientation and enhance polarization, we employed in-situ AC electric bias (E) during rapid thermal annealing (RTA) treatment (i.e. RTA+E). The main findings are: (1) Direct experimental evidence of variable orthogonal (0-) PA has been obtained for the first time, originating from tetragonal (T-) to O- transition in RTA cooling; (2) Applying E during cooling significantly enhances polarization in hafnium-based FE capacitors up to 121.6\% increase; (3) The RTA+E method effectively controls the O-PA orientation towards the out-of-plane E direction. These findings solidly demonstrate that the PA orientation of O-grain can be controlled in fluorite-type FE thin films.",
keywords = "ferroelectric capacitor, hafnium-based oxide, orientation control, polarization",
author = "Zhaomeng Gao and Tianjiao Xin and D. Kai and Qiwendong Zhao and Yiwei Wang and Cheng Liu and X. Yilin and Rui Wang and Guangjie Shi and Yunzhe Zheng and Yonghui Zheng and Yan Cheng and Hangbing Lyu",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2024 ; Conference date: 16-06-2024 Through 20-06-2024",
year = "2024",
doi = "10.1109/VLSITechnologyandCir46783.2024.10631432",
language = "英语",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2024 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2024",
address = "美国",
}