PN-junction diode behavior based on polyaniline nanotubes field effect transistor

K. C. Aw; N. Tjitra Salim; Hui Peng; Lijuan Zhang; J. Travas-Sejdic; W. Gao

doi:10.1007/s10854-007-9438-7

PN-junction diode behavior based on polyaniline nanotubes field effect transistor

K. C. Aw^*
, N. Tjitra Salim
, Hui Peng
, Lijuan Zhang
, J. Travas-Sejdic
, W. Gao

^*此作品的通讯作者

The University of Auckland

科研成果: 期刊稿件 › 文章 › 同行评审

3 引用（Scopus）

摘要

Polyaniline (PANI) nanotubes configured as a field effect transistor (FET) exhibits a p-n junction diode behavior. The forward-bias current can be modulated by a gate voltage; turning on at negative gate voltage and turning off at positive gate voltage. An energy band diagram model has been proposed to explain the rectifying effect of the PANI nanotubes FET (PNT-FET). All the four different forward bias conduction mechanisms of a typical p-n junction diode can be identified for this PNT-FET using a semi-log graph to confirm this resemblance.

源语言	英语
页（从-至）	996-999
页数	4
期刊	Journal of Materials Science: Materials in Electronics
卷	19
期	10
DOI	https://doi.org/10.1007/s10854-007-9438-7
出版状态	已出版 - 10月 2008
已对外发布	是

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abstract = "Polyaniline (PANI) nanotubes configured as a field effect transistor (FET) exhibits a p-n junction diode behavior. The forward-bias current can be modulated by a gate voltage; turning on at negative gate voltage and turning off at positive gate voltage. An energy band diagram model has been proposed to explain the rectifying effect of the PANI nanotubes FET (PNT-FET). All the four different forward bias conduction mechanisms of a typical p-n junction diode can be identified for this PNT-FET using a semi-log graph to confirm this resemblance.",

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AU - Aw, K. C.

AU - Tjitra Salim, N.

AU - Peng, Hui

AU - Zhang, Lijuan

AU - Travas-Sejdic, J.

AU - Gao, W.

PY - 2008/10

Y1 - 2008/10

N2 - Polyaniline (PANI) nanotubes configured as a field effect transistor (FET) exhibits a p-n junction diode behavior. The forward-bias current can be modulated by a gate voltage; turning on at negative gate voltage and turning off at positive gate voltage. An energy band diagram model has been proposed to explain the rectifying effect of the PANI nanotubes FET (PNT-FET). All the four different forward bias conduction mechanisms of a typical p-n junction diode can be identified for this PNT-FET using a semi-log graph to confirm this resemblance.

AB - Polyaniline (PANI) nanotubes configured as a field effect transistor (FET) exhibits a p-n junction diode behavior. The forward-bias current can be modulated by a gate voltage; turning on at negative gate voltage and turning off at positive gate voltage. An energy band diagram model has been proposed to explain the rectifying effect of the PANI nanotubes FET (PNT-FET). All the four different forward bias conduction mechanisms of a typical p-n junction diode can be identified for this PNT-FET using a semi-log graph to confirm this resemblance.

UR - https://www.scopus.com/pages/publications/46849096031

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DO - 10.1007/s10854-007-9438-7

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EP - 999

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 10

ER -

PN-junction diode behavior based on polyaniline nanotubes field effect transistor

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