Plasma-reactive SiC quantum dots on polycrystalline AlN films

S. Y. Huang; S. Xu; J. D. Long; Z. Sun; T. Chen

doi:10.1063/1.2173957

Plasma-reactive SiC quantum dots on polycrystalline AlN films

S. Y. Huang^*
, S. Xu
, J. D. Long
, Z. Sun
, T. Chen

^*此作品的通讯作者

物理与电子科学学院

East China Normal University
Nanyang Technological University

科研成果: 期刊稿件 › 文章 › 同行评审

11 引用（Scopus）

摘要

The self-assembly of SiC quantum dots (SiC QDs) formed on AlN films is investigated. Under optimized growth conditions, SiC QDs with a remarkably narrow size distribution on polycrystalline AlN films can be achieved with the presence of a wetting layer of SiC film by low-frequency inductively coupled plasma- (LF-ICP-) assisted magnetron sputtering. A transmission electron microscope (TEM), field-emission scanning electron microscope (FE-SEM) images, and an energy-dispersive x-ray (EDX) spectrometer clearly demonstrate that SiC QDs are formed on the polycrystalline AlN films.

源语言	英语
期刊	Physics of Plasmas
卷	13
期	2
DOI	https://doi.org/10.1063/1.2173957
出版状态	已出版 - 2月 2006

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abstract = "The self-assembly of SiC quantum dots (SiC QDs) formed on AlN films is investigated. Under optimized growth conditions, SiC QDs with a remarkably narrow size distribution on polycrystalline AlN films can be achieved with the presence of a wetting layer of SiC film by low-frequency inductively coupled plasma- (LF-ICP-) assisted magnetron sputtering. A transmission electron microscope (TEM), field-emission scanning electron microscope (FE-SEM) images, and an energy-dispersive x-ray (EDX) spectrometer clearly demonstrate that SiC QDs are formed on the polycrystalline AlN films.",

author = "Huang, \{S. Y.\} and S. Xu and Long, \{J. D.\} and Z. Sun and T. Chen",

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doi = "10.1063/1.2173957",

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T1 - Plasma-reactive SiC quantum dots on polycrystalline AlN films

AU - Huang, S. Y.

AU - Xu, S.

AU - Long, J. D.

AU - Sun, Z.

AU - Chen, T.

PY - 2006/2

Y1 - 2006/2

N2 - The self-assembly of SiC quantum dots (SiC QDs) formed on AlN films is investigated. Under optimized growth conditions, SiC QDs with a remarkably narrow size distribution on polycrystalline AlN films can be achieved with the presence of a wetting layer of SiC film by low-frequency inductively coupled plasma- (LF-ICP-) assisted magnetron sputtering. A transmission electron microscope (TEM), field-emission scanning electron microscope (FE-SEM) images, and an energy-dispersive x-ray (EDX) spectrometer clearly demonstrate that SiC QDs are formed on the polycrystalline AlN films.

AB - The self-assembly of SiC quantum dots (SiC QDs) formed on AlN films is investigated. Under optimized growth conditions, SiC QDs with a remarkably narrow size distribution on polycrystalline AlN films can be achieved with the presence of a wetting layer of SiC film by low-frequency inductively coupled plasma- (LF-ICP-) assisted magnetron sputtering. A transmission electron microscope (TEM), field-emission scanning electron microscope (FE-SEM) images, and an energy-dispersive x-ray (EDX) spectrometer clearly demonstrate that SiC QDs are formed on the polycrystalline AlN films.

UR - https://www.scopus.com/pages/publications/33644605490

U2 - 10.1063/1.2173957

DO - 10.1063/1.2173957

M3 - 文章

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SN - 1070-664X

VL - 13

JO - Physics of Plasmas

JF - Physics of Plasmas

IS - 2

ER -

Plasma-reactive SiC quantum dots on polycrystalline AlN films

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