Photoluminescence properties of Er doped into C-rich SiC nanoparticle films

Polycrystalline silicon carbide (P-SiC) films containing SiC nanoparticles and Er were prepared by r.f. reactive magnetron co-sputtering technique with SiC and Er targets on low-temperature silicon (111) and silicon dioxide substrates with the mixed gas of pure argon, methane, and hydrogen. Surface morphology and photoluminescence (PL) properties of them were measured by field-emission scanning electron microscope and Raman spectroscopy. The peak position, intensity, and the full width at half maximum (FWHM) of PL spectra were relevant with Er doping levels and deposition conditions.