Photoluminescence investigation of doped asymmetric coupled quantum wells

Huibing Mao; Jiaming Zhang; Wei Lu; Shuechu Shen

doi:10.1143/JJAP.34.5637

Photoluminescence investigation of doped asymmetric coupled quantum wells

Huibing Mao
, Jiaming Zhang
, Wei Lu
, Shuechu Shen

Chinese Academy of Sciences

科研成果: 期刊稿件 › 文章 › 同行评审

3 引用（Scopus）

摘要

We report in this paper the photoluminescence (PL) investigation of a partly doped asymmetric coupled quantum well (ACQW) structure. The dependence of non-resonant tunneling rate on excitation power for different Al_O.2Ga_O.8As interbarrier thicknesses is studied in detail. The PL intensity from a 20 nm Al_O.2Ga_O.8As well is much larger than that from a 5.5 nm Si-doped GaAs well when the interbarrier is thick (> 12 nm). This result indicates that photo excited carriers are preferentially relaxed toward the wide well, which has larger state density than the doped narrow well. The competition among different processes of intersubband relaxations is discussed in connection with the PL spectra.

源语言	英语
页（从-至）	5637-5639
页数	3
期刊	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
卷	34
期	10
DOI	https://doi.org/10.1143/JJAP.34.5637
出版状态	已出版 - 10月 1995
已对外发布	是

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title = "Photoluminescence investigation of doped asymmetric coupled quantum wells",

abstract = "We report in this paper the photoluminescence (PL) investigation of a partly doped asymmetric coupled quantum well (ACQW) structure. The dependence of non-resonant tunneling rate on excitation power for different AlO.2GaO.8As interbarrier thicknesses is studied in detail. The PL intensity from a 20 nm AlO.2GaO.8As well is much larger than that from a 5.5 nm Si-doped GaAs well when the interbarrier is thick (> 12 nm). This result indicates that photo excited carriers are preferentially relaxed toward the wide well, which has larger state density than the doped narrow well. The competition among different processes of intersubband relaxations is discussed in connection with the PL spectra.",

keywords = "Asymmetric coupled quantum well, Effective mass filtering, Intersubband relaxation, Photoluminescence, Rate equation",

author = "Huibing Mao and Jiaming Zhang and Wei Lu and Shuechu Shen",

year = "1995",

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doi = "10.1143/JJAP.34.5637",

language = "英语",

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T1 - Photoluminescence investigation of doped asymmetric coupled quantum wells

AU - Mao, Huibing

AU - Zhang, Jiaming

AU - Lu, Wei

AU - Shen, Shuechu

PY - 1995/10

Y1 - 1995/10

N2 - We report in this paper the photoluminescence (PL) investigation of a partly doped asymmetric coupled quantum well (ACQW) structure. The dependence of non-resonant tunneling rate on excitation power for different AlO.2GaO.8As interbarrier thicknesses is studied in detail. The PL intensity from a 20 nm AlO.2GaO.8As well is much larger than that from a 5.5 nm Si-doped GaAs well when the interbarrier is thick (> 12 nm). This result indicates that photo excited carriers are preferentially relaxed toward the wide well, which has larger state density than the doped narrow well. The competition among different processes of intersubband relaxations is discussed in connection with the PL spectra.

AB - We report in this paper the photoluminescence (PL) investigation of a partly doped asymmetric coupled quantum well (ACQW) structure. The dependence of non-resonant tunneling rate on excitation power for different AlO.2GaO.8As interbarrier thicknesses is studied in detail. The PL intensity from a 20 nm AlO.2GaO.8As well is much larger than that from a 5.5 nm Si-doped GaAs well when the interbarrier is thick (> 12 nm). This result indicates that photo excited carriers are preferentially relaxed toward the wide well, which has larger state density than the doped narrow well. The competition among different processes of intersubband relaxations is discussed in connection with the PL spectra.

KW - Asymmetric coupled quantum well

KW - Effective mass filtering

KW - Intersubband relaxation

KW - Photoluminescence

KW - Rate equation

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DO - 10.1143/JJAP.34.5637

M3 - 文章

AN - SCOPUS:0029391026

SN - 0021-4922

VL - 34

SP - 5637

EP - 5639

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 10

ER -

Photoluminescence investigation of doped asymmetric coupled quantum wells

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