Photoluminescence from Eu ions implanted SiO2 thin films

F. Liu; M. Zhu; L. Wang; Y. Hou

doi:10.1016/S0925-8388(00)00870-7

Photoluminescence from Eu ions implanted SiO₂ thin films

F. Liu^*
, M. Zhu
, L. Wang
, Y. Hou

^*此作品的通讯作者

University of Science and Technology of China
Beijing Jiaotong University

科研成果: 期刊稿件 › 文章 › 同行评审

6 引用（Scopus）

摘要

Photoluminescence (PL) and PL excitation spectra from Eu^3- implanted thermal growth SiO₂ thin films have been investigated at room temperature. After annealing at 1000 °C in N₂, the red light emission from Eu ions doped SiO₂ film, corresponding to the ⁵D₀-⁷F_J transition of Eu³⁺, was observed. With increasing the annealing temperature (T_a) to 1200 °C, a strong blue light emission band centered at around 450 nm appears. The conversion of Eu³⁺ to Eu²⁺ is discussed.

源语言	英语
页（从-至）	93-96
页数	4
期刊	Journal of Alloys and Compounds
卷	311
期	1
DOI	https://doi.org/10.1016/S0925-8388(00)00870-7
出版状态	已出版 - 12 10月 2000
已对外发布	是

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title = "Photoluminescence from Eu ions implanted SiO2 thin films",

abstract = "Photoluminescence (PL) and PL excitation spectra from Eu3- implanted thermal growth SiO2 thin films have been investigated at room temperature. After annealing at 1000 °C in N2, the red light emission from Eu ions doped SiO2 film, corresponding to the 5D0-7FJ transition of Eu3+, was observed. With increasing the annealing temperature (Ta) to 1200 °C, a strong blue light emission band centered at around 450 nm appears. The conversion of Eu3+ to Eu2+ is discussed.",

author = "F. Liu and M. Zhu and L. Wang and Y. Hou",

year = "2000",

month = oct,

day = "12",

doi = "10.1016/S0925-8388(00)00870-7",

language = "英语",

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journal = "Journal of Alloys and Compounds",

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TY - JOUR

T1 - Photoluminescence from Eu ions implanted SiO2 thin films

AU - Liu, F.

AU - Zhu, M.

AU - Wang, L.

AU - Hou, Y.

PY - 2000/10/12

Y1 - 2000/10/12

N2 - Photoluminescence (PL) and PL excitation spectra from Eu3- implanted thermal growth SiO2 thin films have been investigated at room temperature. After annealing at 1000 °C in N2, the red light emission from Eu ions doped SiO2 film, corresponding to the 5D0-7FJ transition of Eu3+, was observed. With increasing the annealing temperature (Ta) to 1200 °C, a strong blue light emission band centered at around 450 nm appears. The conversion of Eu3+ to Eu2+ is discussed.

AB - Photoluminescence (PL) and PL excitation spectra from Eu3- implanted thermal growth SiO2 thin films have been investigated at room temperature. After annealing at 1000 °C in N2, the red light emission from Eu ions doped SiO2 film, corresponding to the 5D0-7FJ transition of Eu3+, was observed. With increasing the annealing temperature (Ta) to 1200 °C, a strong blue light emission band centered at around 450 nm appears. The conversion of Eu3+ to Eu2+ is discussed.

UR - https://www.scopus.com/pages/publications/0034300762

U2 - 10.1016/S0925-8388(00)00870-7

DO - 10.1016/S0925-8388(00)00870-7

M3 - 文章

AN - SCOPUS:0034300762

SN - 0925-8388

VL - 311

SP - 93

EP - 96

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - 1

ER -

Photoluminescence from Eu ions implanted SiO2 thin films

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Photoluminescence from Eu ions implanted SiO₂ thin films