Photoelectronic response characteristics of lattice mismatched Inas0.07Sb0.93 films based on GaAs substrate

Liang Huang; Pingping Chen; Shaowei Wang; Zhifeng Li

Photoelectronic response characteristics of lattice mismatched Inas_0.07Sb_0.93 films based on GaAs substrate

Liang Huang
, Pingping Chen
, Shaowei Wang
, Zhifeng Li

CAS - Shanghai Institute of Technical Physics

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

The new infrared material InAs_0.07Sb_0.93 thin films were prepared on lattice mismatched GaAs substrate with the method of Molecular Beam Epitaxy (MBE). Then electrodes were prepared on the InAs_0.07Sb_0.93 film by using electron beam lithography. The blackbody response, dark current and photocurrent of the prepared photoconductive device were measured with blackbody and fourier transform infrared spectroscopy. A wide-band infrared detector with the response peak at around 4 μm and FWHM of 4 μm is obtained.

源语言	英语
页（从-至）	958-962
页数	5
期刊	Bandaoti Guangdian/Semiconductor Optoelectronics
卷	35
期	6
出版状态	已出版 - 1 12月 2014
已对外发布	是

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@article{48ea9b38e6a149c384122e3732f7ac34,

title = "Photoelectronic response characteristics of lattice mismatched Inas0.07Sb0.93 films based on GaAs substrate",

abstract = "The new infrared material InAs0.07Sb0.93 thin films were prepared on lattice mismatched GaAs substrate with the method of Molecular Beam Epitaxy (MBE). Then electrodes were prepared on the InAs0.07Sb0.93 film by using electron beam lithography. The blackbody response, dark current and photocurrent of the prepared photoconductive device were measured with blackbody and fourier transform infrared spectroscopy. A wide-band infrared detector with the response peak at around 4 μm and FWHM of 4 μm is obtained.",

keywords = "InAsSb film, Infrared detector, Mid-infrared",

author = "Liang Huang and Pingping Chen and Shaowei Wang and Zhifeng Li",

year = "2014",

month = dec,

day = "1",

language = "英语",

volume = "35",

pages = "958--962",

journal = "Bandaoti Guangdian/Semiconductor Optoelectronics",

issn = "1001-5868",

publisher = "China National Publishing Industry Trading Corporation",

number = "6",

}

TY - JOUR

T1 - Photoelectronic response characteristics of lattice mismatched Inas0.07Sb0.93 films based on GaAs substrate

AU - Huang, Liang

AU - Chen, Pingping

AU - Wang, Shaowei

AU - Li, Zhifeng

PY - 2014/12/1

Y1 - 2014/12/1

N2 - The new infrared material InAs0.07Sb0.93 thin films were prepared on lattice mismatched GaAs substrate with the method of Molecular Beam Epitaxy (MBE). Then electrodes were prepared on the InAs0.07Sb0.93 film by using electron beam lithography. The blackbody response, dark current and photocurrent of the prepared photoconductive device were measured with blackbody and fourier transform infrared spectroscopy. A wide-band infrared detector with the response peak at around 4 μm and FWHM of 4 μm is obtained.

AB - The new infrared material InAs0.07Sb0.93 thin films were prepared on lattice mismatched GaAs substrate with the method of Molecular Beam Epitaxy (MBE). Then electrodes were prepared on the InAs0.07Sb0.93 film by using electron beam lithography. The blackbody response, dark current and photocurrent of the prepared photoconductive device were measured with blackbody and fourier transform infrared spectroscopy. A wide-band infrared detector with the response peak at around 4 μm and FWHM of 4 μm is obtained.

KW - InAsSb film

KW - Infrared detector

KW - Mid-infrared

UR - https://www.scopus.com/pages/publications/84921835645

M3 - 文章

AN - SCOPUS:84921835645

SN - 1001-5868

VL - 35

SP - 958

EP - 962

JO - Bandaoti Guangdian/Semiconductor Optoelectronics

JF - Bandaoti Guangdian/Semiconductor Optoelectronics

IS - 6

ER -

Photoelectronic response characteristics of lattice mismatched Inas0.07Sb0.93 films based on GaAs substrate

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Photoelectronic response characteristics of lattice mismatched Inas_0.07Sb_0.93 films based on GaAs substrate