Photocurrent studies of (β-FeSi2 thin films

Wenzhong Shen; Lianwei Wang; Wenguo Tang; Ziyuan Li; Xuechu Shen

doi:10.1088/0256-307X/12/1/010

Photocurrent studies of (β-FeSi₂ thin films

Wenzhong Shen
, Lianwei Wang
, Wenguo Tang
, Ziyuan Li
, Xuechu Shen

CAS - Shanghai Institute of Technical Physics
CAS - Shanghai Institute of Microsystem and Information Technology

科研成果: 期刊稿件 › 文章 › 同行评审

1 引用（Scopus）

摘要

We report the observation of photocurrent spectrum involving both the fundamental interband, extrinsic defect transitions 3-FeSi2 and the intrinsic transitions of Si substrate and demonstrate the sensitivity and reliability of the photocurrent measurement for revealing the energy band structure of B-FeSi2. The transition energies are in good agreement with the results of absorption measurement and the theoretical calculation based on a simple recombination model.

源语言	英语
页（从-至）	34-37
页数	4
期刊	Chinese Physics Letters
卷	12
期	1
DOI	https://doi.org/10.1088/0256-307X/12/1/010
出版状态	已出版 - 1月 1995
已对外发布	是

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@article{c4757acbef6b42ba8a8269a44cb54cff,

title = "Photocurrent studies of (β-FeSi2 thin films",

abstract = "We report the observation of photocurrent spectrum involving both the fundamental interband, extrinsic defect transitions 3-FeSi2 and the intrinsic transitions of Si substrate and demonstrate the sensitivity and reliability of the photocurrent measurement for revealing the energy band structure of B-FeSi2. The transition energies are in good agreement with the results of absorption measurement and the theoretical calculation based on a simple recombination model.",

author = "Wenzhong Shen and Lianwei Wang and Wenguo Tang and Ziyuan Li and Xuechu Shen",

year = "1995",

month = jan,

doi = "10.1088/0256-307X/12/1/010",

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T1 - Photocurrent studies of (β-FeSi2 thin films

AU - Shen, Wenzhong

AU - Wang, Lianwei

AU - Tang, Wenguo

AU - Li, Ziyuan

AU - Shen, Xuechu

PY - 1995/1

Y1 - 1995/1

N2 - We report the observation of photocurrent spectrum involving both the fundamental interband, extrinsic defect transitions 3-FeSi2 and the intrinsic transitions of Si substrate and demonstrate the sensitivity and reliability of the photocurrent measurement for revealing the energy band structure of B-FeSi2. The transition energies are in good agreement with the results of absorption measurement and the theoretical calculation based on a simple recombination model.

AB - We report the observation of photocurrent spectrum involving both the fundamental interband, extrinsic defect transitions 3-FeSi2 and the intrinsic transitions of Si substrate and demonstrate the sensitivity and reliability of the photocurrent measurement for revealing the energy band structure of B-FeSi2. The transition energies are in good agreement with the results of absorption measurement and the theoretical calculation based on a simple recombination model.

UR - https://www.scopus.com/pages/publications/0039445228

U2 - 10.1088/0256-307X/12/1/010

DO - 10.1088/0256-307X/12/1/010

M3 - 文章

AN - SCOPUS:0039445228

SN - 0256-307X

VL - 12

SP - 34

EP - 37

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 1

ER -

Photocurrent studies of (β-FeSi2 thin films

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Photocurrent studies of (β-FeSi₂ thin films