@inproceedings{01712b1b084d43be97d6f364d9a7a5f6,
title = "Phase change properties of Ti-Sb-Te thin films deposited by thermal atomic layer deposition",
abstract = "Phase change random access memory (PCM) appears to be the strongest candidate for next-generation high density nonvolatile memory. The fabrication of ultrahigh density PCM depends heavily on the thin film growth technique for the phase changing chalcogenide material. In this study, TiSb2Te4 (TST) thin films were deposited by thermal atomic layer deposition (ALD) method using TiCl4, SbCl3, (Et3Si)2Te as precursors. The threshold voltage for the cell based on thermal ALD-deposited TST is about 2.0 V, which is much lower than that (3.5 V) of the device based on PVD-deposited Ge2Sb2Te5 (GST) with the identical cell architecture. Tests of TST-based PCM cells have demonstrated a fast switching rate of ∼100 ns. Furthermore, because of the lower melting point and thermal conductivities of TST materials, TST-based PCM cells exhibit 19\% reduction of pulse voltages for Reset operation compared with GST-based PCM cells. These results show that thermal ALD is an attractive method for the preparation of phase change materials.",
author = "Sannian Song and Lanlan Shen and Zhitang Song and Dongning Yao and Tianqi Guo and Le Li and Bo Liu and Liangcai Wu and Yan Cheng and Yuqiang Ding and Songlin Feng",
note = "Publisher Copyright: {\textcopyright} 2016 SPIE.; 2016 International Workshop on Information Data Storage and 10th International Symposium on Optical Storage, IWIS/ISOS 2016 ; Conference date: 10-04-2016 Through 13-04-2016",
year = "2016",
doi = "10.1117/12.2246211",
language = "英语",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Fuxi Gan and Zhitang Song",
booktitle = "2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage",
address = "美国",
}