Phase-change material Ge0.61Sb2Te for application in high-speed phase change random access memory

Yifeng Gu; Sannian Song; Zhitang Song; Suyuan Bai; Yan Cheng; Zhonghua Zhang; Bo Liu; Songlin Feng

doi:10.1063/1.4795595

Phase-change material Ge_0.61Sb₂Te for application in high-speed phase change random access memory

Yifeng Gu^*
, Sannian Song
, Zhitang Song
, Suyuan Bai
, Yan Cheng
, Zhonghua Zhang
, Bo Liu
, Songlin Feng

^*此作品的通讯作者

CAS - Shanghai Institute of Microsystem and Information Technology
University of Chinese Academy of Sciences
CAS - Shanghai Institute of Technical Physics
Liaoning Normal University

科研成果: 期刊稿件 › 文章 › 同行评审

28 引用（Scopus）

摘要

Compared with Ge₂Sb₂Te₅, Ge _0.61Sb₂Te has higher crystallization temperature (∼200.5 °C), larger crystallization activation energy (∼3.28 eV), and better data retention (∼120.8 °C for 10 yr). The switching between amorphous and crystalline state could be triggered by the electric pulse of as short as 10 ns. With the resistance ratio of two orders of magnitude, the endurance test was up to 10⁶ cycles. Ge_0.61Sb ₂Te material is a promising candidate for the trade-off between programming speed and data retention.

源语言	英语
文章编号	103110
期刊	Applied Physics Letters
卷	102
期	10
DOI	https://doi.org/10.1063/1.4795595
出版状态	已出版 - 11 3月 2013
已对外发布	是

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title = "Phase-change material Ge0.61Sb2Te for application in high-speed phase change random access memory",

abstract = "Compared with Ge2Sb2Te5, Ge 0.61Sb2Te has higher crystallization temperature (∼200.5 °C), larger crystallization activation energy (∼3.28 eV), and better data retention (∼120.8 °C for 10 yr). The switching between amorphous and crystalline state could be triggered by the electric pulse of as short as 10 ns. With the resistance ratio of two orders of magnitude, the endurance test was up to 106 cycles. Ge0.61Sb 2Te material is a promising candidate for the trade-off between programming speed and data retention.",

author = "Yifeng Gu and Sannian Song and Zhitang Song and Suyuan Bai and Yan Cheng and Zhonghua Zhang and Bo Liu and Songlin Feng",

year = "2013",

month = mar,

day = "11",

doi = "10.1063/1.4795595",

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volume = "102",

journal = "Applied Physics Letters",

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T1 - Phase-change material Ge0.61Sb2Te for application in high-speed phase change random access memory

AU - Gu, Yifeng

AU - Song, Sannian

AU - Song, Zhitang

AU - Bai, Suyuan

AU - Cheng, Yan

AU - Zhang, Zhonghua

AU - Liu, Bo

AU - Feng, Songlin

PY - 2013/3/11

Y1 - 2013/3/11

N2 - Compared with Ge2Sb2Te5, Ge 0.61Sb2Te has higher crystallization temperature (∼200.5 °C), larger crystallization activation energy (∼3.28 eV), and better data retention (∼120.8 °C for 10 yr). The switching between amorphous and crystalline state could be triggered by the electric pulse of as short as 10 ns. With the resistance ratio of two orders of magnitude, the endurance test was up to 106 cycles. Ge0.61Sb 2Te material is a promising candidate for the trade-off between programming speed and data retention.

AB - Compared with Ge2Sb2Te5, Ge 0.61Sb2Te has higher crystallization temperature (∼200.5 °C), larger crystallization activation energy (∼3.28 eV), and better data retention (∼120.8 °C for 10 yr). The switching between amorphous and crystalline state could be triggered by the electric pulse of as short as 10 ns. With the resistance ratio of two orders of magnitude, the endurance test was up to 106 cycles. Ge0.61Sb 2Te material is a promising candidate for the trade-off between programming speed and data retention.

UR - https://www.scopus.com/pages/publications/84875142053

U2 - 10.1063/1.4795595

DO - 10.1063/1.4795595

M3 - 文章

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SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 103110

ER -

Phase-change material Ge0.61Sb2Te for application in high-speed phase change random access memory

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Phase-change material Ge_0.61Sb₂Te for application in high-speed phase change random access memory